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    THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
    1.
    发明申请
    THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME 有权

    公开(公告)号：US20220328511A1

    公开(公告)日：2022-10-13

    申请号：US17541444

    申请日：2021-12-03

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Giyong CHUNG ,  Jae-Bok BAEK ,  Jaeryong SIM ,  Jeehoon HAN

    IPC: H01L27/11573 ,  H01L23/535 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11582

    Abstract: A three-dimensional semiconductor memory device includes a first substrate, a peripheral circuit structure with peripheral transistors on the first substrate, a second substrate on the peripheral circuit structure, a lower insulating layer in contact with a side surface of the second substrate, a top surface of the lower insulating layer having a concave profile, a first stack on the second substrate, the first stack including repeatedly alternating first interlayer dielectric layers and gate electrodes, and a first mold structure on the lower insulating layer, the first mold structure including repeatedly alternating sacrificial layers and second interlayer dielectric layers, and a top surface of the first mold structure being at a level lower than a topmost surface of the first stack.

    SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME 有权

    公开(公告)号：US20220310639A1

    公开(公告)日：2022-09-29

    申请号：US17656088

    申请日：2022-03-23

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： GIYONG CHUNG ,  Seungyoon KIM ,  Jaeryong SIM ,  Jeehoon HAN

    IPC: H01L27/11524 ,  H01L27/11526 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11582 ,  H01L25/065 ,  H01L23/528

    Abstract: A semiconductor device includes a stack structure and an insulation structure that covers the stack structure, a vertical memory structure that penetrates the stack structure, and a separation structure that penetrates the stack structure and has an upper surface located at a higher level than an upper surface of the vertical memory structure. The stack structure includes three gate stack groups stacked in a vertical direction. Each of the three gate stack groups includes gate layers stacked and spaced apart from each other in the vertical direction. At a height level between a lowermost gate layer and an uppermost gate layer, a side surface of the vertical memory structure includes memory side surface slope changing portions, and a side surface of the separation structure includes separation side surface slope changing portions positioned at substantially a same height level as some of the memory side surface slope changing portions.

    SEMICONDUCTOR DEVICES
    3.
    发明申请
    SEMICONDUCTOR DEVICES 有权

    公开(公告)号：US20210098483A1

    公开(公告)日：2021-04-01

    申请号：US16890500

    申请日：2020-06-02

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seogoo KANG ,  Daehyun JANG ,  Jaeryong SIM ,  Jongseon AHN ,  Jeehoon HAN

    IPC: H01L27/11575 ,  H01L27/11582 ,  H01L27/11556 ,  H01L27/11548

    Abstract: A semiconductor device includes a peripheral circuit region including a first substrate and circuit elements on the first substrate; and a memory cell region including a second substrate on an upper portion of the first substrate, gate electrodes spaced apart from each other and vertically stacked on the second substrate, channel structures extending vertically through the gate electrodes to the second substrate, first separation regions penetrating through the gate electrodes between the channel structures and extending in one direction, and a second separation region extending vertically to penetrate through the second substrate from above and having a bent portion due to a change in width.

    SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME 有权

    公开(公告)号：US20220406801A1

    公开(公告)日：2022-12-22

    申请号：US17692797

    申请日：2022-03-11

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seungyoon KIM ,  Jaeryong SIM ,  Jeehoon HAN

    IPC: H01L27/11524 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582 ,  H01L23/528 ,  H01L23/522

    Abstract: A semiconductor device and a data storage system, the device including a lower structure; and an upper structure on the lower structure and including a memory cell array, wherein the lower structure includes a semiconductor substrate, first and second active regions spaced apart from each other in a first direction on the semiconductor substrate, the first and second active regions being defined by an isolation insulating layer on the semiconductor substrate, and first and second gate pattern structures extending in the first direction to cross the first and second active regions, respectively, on the semiconductor substrate, the first gate pattern structure and the second gate pattern structure have first and second end portions spaced apart from each other in a facing manner in the first direction, respectively, and the first and second end portions are concavely curved in opposite directions away from each other in a plan view.

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