公开(公告)号：US20240395842A1

公开(公告)日：2024-11-28

申请号：US18406918

申请日：2024-01-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaesang YOO ,  Seungjoon LEE ,  Jeongki KIM ,  Chungho SONG ,  Minwook JUNG

IPC: H01L27/146

Abstract: An image sensor includes a semiconductor substrate including pixels, a first surface, and a second surface opposite to the first surface. A trench isolation layer is provided in a trench penetrating the first surface and the second surface of the semiconductor substrate, and separating the pixels from each other. A micro lens is disposed on the second surface, wherein the trench isolation layer includes: a first conductive isolation layer extending from the first surface to the second surface. An insulation liner is disposed between the first conductive isolation layer and the semiconductor substrate. A second conductive isolation layer extends from the second surface to the first surface, the second conductive isolation layer being in contact with the first conductive isolation layer.

公开(公告)号：US20230009280A1

公开(公告)日：2023-01-12

申请号：US17710296

申请日：2022-03-31

Applicant: SAMSUNG ELECTRONICS CO., LTD,

Inventor： Jaesang YOO ,  Dohoon Kim ,  Seokjong Kim ,  Sungkyoo Park ,  Sangil Jung

IPC: H01L27/146

Abstract: An image sensor includes a substrate including a plurality of photodiodes, a color filter array having a plurality of color filters, and a horizontal insulating layer disposed between the substrate and the color filter array, and a horizontal insulating layer is formed of only a high-K dielectric material, not including silicon, and having a dielectric constant higher than a dielectric constant of silicon oxide, and has a thickness of equal to or greater than 300 angstroms and equal to or less than 1,000.

公开(公告)号：US20170040374A1

公开(公告)日：2017-02-09

申请号：US15229265

申请日：2016-08-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taeseok OH ,  Junetaeg LEE ,  Seung-Hun SHIN ,  Jaesang YOO

IPC: H01L27/146 ,  H01L23/528 ,  H01L23/522 ,  H01L23/48

CPC classification number: H01L27/14636 ,  H01L21/187 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L25/0657 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14687 ,  H01L27/1469

Abstract: A semiconductor device includes a substrate, a circuit layer formed on a first surface of the substrate and including a via pad and an interlayer insulating layer covering the via pad, a via structure configured to fully pass through the substrate, partially pass through the interlayer insulating layer and be in contact with the via pad, a via isolation insulating layer configured to pass through the substrate and be spaced apart from outer side surfaces of the via structure in a horizontal direction and a pad structure buried in the substrate and exposed on a second surface of the substrate opposite the first surface of the substrate.

Abstract translation: 半导体器件包括衬底，形成在衬底的第一表面上并包括通孔焊盘和覆盖通孔焊盘的层间绝缘层的电路层，构造成完全通过衬底的通孔结构，部分地穿过层间绝缘层 层，并且与通孔焊盘接触;通孔隔离绝缘层，被配置为穿过基板并且在水平方向上与通孔结构的外侧表面间隔开，并且衬垫结构被埋在基板中并暴露在第二 衬底的与衬底的第一表面相对的表面。