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Patent Agency Ranking
公开(公告)号：US11776644B2
公开(公告)日：2023-10-03
申请号：US17591987
申请日：2022-02-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Minho Choi , Jaeseong Lim , Kyungryun Kim , Daehyun Kim , Wonil Bae , Hohyun Shin , Sanghoon Jung , Hyongryol Hwang
Abstract: A voltage trimming circuit including: a first resistance circuit having a first resistance value determined by up codes and down codes; a second resistance circuit having a second resistance value determined by the up codes and the down codes; and a comparator to output a voltage detection signal by comparing a voltage level of a reference voltage trimming node to that of a feedback node, wherein the voltage detection signal adjusts the up and down codes, which increase the first resistance value and decrease the second resistance value when the voltage level of the reference voltage trimming node is higher than that of the feedback node, and adjusts the up and down codes, which decrease the first resistance value and increase the second resistance value when the voltage level of the reference voltage trimming node is lower than that of the feedback node.
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公开(公告)号：US12062404B2
公开(公告)日：2024-08-13
申请号：US18239548
申请日：2023-08-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Minho Choi , Jaeseong Lim , Kyungryun Kim , Daehyun Kim , Wonil Bae , Hohyun Shin , Sanghoon Jung , Hyongryol Hwang
Abstract: A voltage trimming circuit including: a first resistance circuit having a first resistance value determined by up codes and down codes; a second resistance circuit having a second resistance value determined by the up codes and the down codes; and a comparator to output a voltage detection signal by comparing a voltage level of a reference voltage trimming node to that of a feedback node, wherein the voltage detection signal adjusts the up and down codes, which increase the first resistance value and decrease the second resistance value when the voltage level of the reference voltage trimming node is higher than that of the feedback node, and adjusts the up and down codes, which decrease the first resistance value and increase the second resistance value when the voltage level of the reference voltage trimming node is lower than that of the feedback node.
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3.发明公开公开(公告)号：US20240062806A1
公开(公告)日：2024-02-22
申请号：US18303522
申请日：2023-04-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seungki Hong , Jinsol Park , Jaeseong Lim , Minsoo Jang , Eunki Hong
IPC: G11C11/4091 , G11C11/4096 , G11C11/4094
CPC classification number: G11C11/4091 , G11C11/4096 , G11C11/4094
Abstract: A method of operating a memory device includes precharging a pair of true and complementary bit lines (BL/BLB) to an equivalent voltage concurrently with precharging a pair of true and complementary sense bit lines (SABL/SABLB) to the equivalent voltage, and then transferring charge associated with offset noise from BL to SABLB concurrently with transferring charge associated with the offset noise from BLB to SABL, so that a voltage difference is established between the SABL and SABLB. Next, a logic state of a memory cell connected to BI is read by transferring charge between the memory cell and BL, concurrently with equilibrating voltages on SABL and SABLB. Then, a voltage difference between SABL and SABLB is sensed and amplified in response to activating an amplifier circuit within the sense amplifier.
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公开(公告)号：US20230410925A1
公开(公告)日：2023-12-21
申请号：US18239548
申请日：2023-08-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Minho Choi , Jaeseong Lim , Kyungryun Kim , Daehyun Kim , Wonil Bae , Hohyun Shin , Sanghoon Jung , Hyongryol Hwang
Abstract: A voltage trimming circuit including: a first resistance circuit having a first resistance value determined by up codes and down codes; a second resistance circuit having a second resistance value determined by the up codes and the down codes; and a comparator to output a voltage detection signal by comparing a voltage level of a reference voltage trimming node to that of a feedback node, wherein the voltage detection signal adjusts the up and down codes, which increase the first resistance value and decrease the second resistance value when the voltage level of the reference voltage trimming node is higher than that of the feedback node, and adjusts the up and down codes, which decrease the first resistance value and increase the second resistance value when the voltage level of the reference voltage trimming node is lower than that of the feedback node.
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公开(公告)号：US20220284975A1
公开(公告)日：2022-09-08
申请号：US17591987
申请日：2022-02-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Minho Choi , Jaeseong Lim , Kyungryun Kim , Daehyun Kim , Wonil Bae , Hohyun Shin , Sanghoon Jung , Hyongryol Hwang
Abstract: A voltage trimming circuit including: a first resistance circuit having a first resistance value determined by up codes and down codes; a second resistance circuit having a second resistance value determined by the up codes and the down codes; and a comparator to output a voltage detection signal by comparing a voltage level of a reference voltage trimming node to that of a feedback node, wherein the voltage detection signal adjusts the up and down codes, which increase the first resistance value and decrease the second resistance value when the voltage level of the reference voltage trimming node is higher than that of the feedback node, and adjusts the up and down codes, which decrease the first resistance value and increase the second resistance value when the voltage level of the reference voltage trimming node is lower than that of the feedback node.
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