SEMICONDUCTOR DEVICE AND A DATA STORAGE SYSTEM INCLUDING THE SAME

    公开(公告)号:US20220310515A1

    公开(公告)日:2022-09-29

    申请号:US17701097

    申请日:2022-03-22

    Abstract: A semiconductor device includes a structure including a stack structure including a first stack structure and a second stack structure on the first stack structure; a memory vertical structure penetrating the structure; a support vertical structure including a portion penetrating the structure and including an air gap; and a peripheral contact plug, wherein the first and second stack structures includes interlayer insulating layers and gate layers alternately stacked, a side of the memory vertical structure includes a slope changing portion, the peripheral contact plug includes an upper region disposed on a level higher than an upper surface of an uppermost gate layer, the upper region of the peripheral contact plug includes a first region, a second region and a connection region between the first and second regions, and the connection region has a slope different from a slope of at least one of the first and second regions.

    STORAGE DEVICE AND OPERATING METHOD OF STORAGE CONTROLLER

    公开(公告)号:US20240232004A9

    公开(公告)日:2024-07-11

    申请号:US18400256

    申请日:2023-12-29

    CPC classification number: G06F11/1004 G06N20/00

    Abstract: A storage device and an operating method thereof are provided. The storage device includes a non-volatile memory and a storage controller. The storage controller includes a command and address generator, an error detection module, and an interface circuit. The command and address generator generates a first command, an address, and a second command, the second command including an error detection signal for detecting a communication error in the first command and the address. The error detection module generates the error detection signal from the first command and the address. The interface circuit sequentially transmits the first command, the address, and the second command to the non-volatile memory. The first command indicates a type of a memory operation to be performed in the non-volatile memory, and the second command corresponds to a confirm command.

    STORAGE DEVICE AND OPERATING METHOD OF STORAGE CONTROLLER

    公开(公告)号:US20240134741A1

    公开(公告)日:2024-04-25

    申请号:US18400256

    申请日:2023-12-29

    CPC classification number: G06F11/1004 G06N20/00

    Abstract: A storage device and an operating method thereof are provided. The storage device includes a non-volatile memory and a storage controller. The storage controller includes a command and address generator, an error detection module, and an interface circuit. The command and address generator generates a first command, an address, and a second command, the second command including an error detection signal for detecting a communication error in the first command and the address. The error detection module generates the error detection signal from the first command and the address. The interface circuit sequentially transmits the first command, the address, and the second command to the non-volatile memory. The first command indicates a type of a memory operation to be performed in the non-volatile memory, and the second command corresponds to a confirm command.

    APPARATUS AND METHOD FOR WRITING DATA IN A MEMORY

    公开(公告)号:US20210165733A1

    公开(公告)日:2021-06-03

    申请号:US16913707

    申请日:2020-06-26

    Abstract: A device for writing data to a memory, the device including: a first write buffer having a first data width that matches a width of write data included in a write request and wherein the first write buffer is configured to store the write data as first data; a second write buffer having a second data width that matches a data width of the memory and is greater than the first data width; and a controller configured to, based on a write address included in the write request and an address of the second data stored in the second write buffer, write the first data stored in the first write buffer to the second write buffer and write the second data stored in the second write buffer to the memory.

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