公开(公告)号：US20190312054A1

公开(公告)日：2019-10-10

申请号：US16239130

申请日：2019-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jang Gn YUN ,  Joon Sung Lim ,  Eun Suk Cho

IPC: H01L27/11582 ,  H01L27/11565

Abstract: A three-dimensional semiconductor device and method of fabrication is provided. The three-dimensional semiconductor device includes a stacked structure on a lower structure. The stacked structure includes interlayer insulating layers and gate electrodes. The device also includes a channel structure on the lower structure, with the channel structure including a horizontal portion between the stacked structure and the lower structure. The channel structure also includes a plurality of vertical portions extended in a vertical direction. The device also includes support patterns on the lower structure. In addition, the device includes a gate dielectric structure having a lower portion and upper portions. The method of fabrication includes forming the stacked structure with holes. The method also includes removing a sacrificial layer from a horizontal area above the lower structure and forming a channel structure within the holes and within a horizontal space made by removal of the sacrificial layer.

公开(公告)号：US20180254271A1

公开(公告)日：2018-09-06

申请号：US15723669

申请日：2017-10-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyo Seok Woo ,  Jang Gn YUN ,  Joon Sung LIM ,  Sung Min HWANG

IPC: H01L27/07 ,  H01L23/00 ,  H01L49/02 ,  H01L29/49 ,  H01L21/3105 ,  H01L21/768 ,  H01L29/43

CPC classification number: H01L27/0738 ,  H01L21/31051 ,  H01L21/76895 ,  H01L24/06 ,  H01L28/24 ,  H01L29/435 ,  H01L29/4983

Abstract: A semiconductor device is provided including a resistor structure on a semiconductor substrate. The resistor structure includes pad portions and a resistor body connecting the pad portions. The pad portions each have a width greater than a width of the resistor body. The pad portions each include a pad pattern and a liner pattern covering a sidewall and a lower surface of the pad pattern. The resistor body extends laterally from the liner pattern. The pad pattern includes a different material from the resistor body and the liner pattern.

公开(公告)号：US20210143176A1

公开(公告)日：2021-05-13

申请号：US17152883

申请日：2021-01-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jang Gn YUN ,  Jae Duk LEE

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L27/11556 ,  H01L27/11524

Abstract: A three-dimensional semiconductor device includes a stacked structure on a lower structure, the stacked structure including a lower group including gate electrodes vertically stacked and spaced apart from each other, and an upper group including gate electrodes vertically stacked and spaced apart, the lower group and the upper group being vertically stacked, and a vertical structure passing through the stacked structure. The vertical structure may include a vertical core pattern, a vertical buffer portion therein, and a surrounding vertical semiconductor layer, the vertical structure may include a lower vertical portion passing through the lower group and an upper vertical portion passing through the upper group, an upper region of the lower vertical portion may have a width greater than that of a lower region of the upper vertical portion. The vertical buffer portion may be in the lower vertical portion and below the upper vertical portion.