公开(公告)号：US20240302742A1

公开(公告)日：2024-09-12

申请号：US18527056

申请日：2023-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Hwan Park ,  Sungwon Choi ,  Yoonhyun Kwak ,  Jeong Ho Mun ,  Juhyeon Park ,  Songse Yi ,  Hogeun Lee

IPC: G03F7/038 ,  C08F212/14 ,  C08F220/18 ,  C08F230/08 ,  H01L21/027

CPC classification number: G03F7/038 ,  C08F212/30 ,  C08F220/1807 ,  C08F230/08 ,  H01L21/0275

Abstract: A photoresist composition includes a nonionic non-chemically amplified photoresist composition including a photosensitive polymer that includes a first repeating unit having a polarity inversion group and a second repeating unit having a sensitizing group. A method of manufacturing an integrated circuit device includes forming a photoresist film on a feature layer by using the photoresist composition, exposing a first area, which is a portion of the photoresist film, to generate secondary electron from the second repeating unit in the first area and changing a polarity of the first repeating unit by using the secondary electrons in the first area to invert a polarity of the first area, removing a non-exposed area of the photoresist film by using a developer to form a photoresist pattern including the first area, and processing the feature layer by using the photoresist pattern.