公开(公告)号：US20240319594A1

公开(公告)日：2024-09-26

申请号：US18493192

申请日：2023-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chanjae AHN ,  Cheol KANG ,  Minsang KIM ,  Beomseok KIM ,  Changki KIM ,  Hana KIM ,  Hyeran KIM ,  Changheon LEE ,  Sungwon CHOI ,  Hyunseok CHOI

IPC: G03F7/039 ,  C08F212/14 ,  C08F220/18 ,  G03F7/038

CPC classification number: G03F7/039 ,  C08F212/24 ,  C08F212/28 ,  C08F220/1806 ,  C08F220/1807 ,  G03F7/038

Abstract: Provided are a resist composition and a pattern forming method using the same. The resist composition includes a polymer including a first repeating unit repeating unit Formula 1, a photoacid generator, and an organic solvent.




In Formula 1, L11 to L13, a11 to a13, A11 to A13, R11 to R14, b12 to b14, and p are the same as described in the detailed description.

公开(公告)号：US20240176238A1

公开(公告)日：2024-05-30

申请号：US18490857

申请日：2023-10-20

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Masaki Ohashi ,  Jun Hatakeyama ,  Tatsuya Yamahira ,  Yuki Suda

IPC: G03F7/004 ,  C07C69/74 ,  C07C69/78 ,  C07C69/96 ,  C07D333/76 ,  C08F212/14 ,  C08F220/18 ,  C08F220/22 ,  G03F7/038 ,  G03F7/039

CPC classification number: G03F7/0045 ,  C07C69/74 ,  C07C69/78 ,  C07C69/96 ,  C07D333/76 ,  C08F212/24 ,  C08F220/1806 ,  C08F220/1807 ,  C08F220/22 ,  G03F7/0382 ,  G03F7/0392 ,  C07C2601/12 ,  C07C2603/74

Abstract: A sulfonium salt of specific structure has a high decomposition efficiency and a high acid diffusion controlling ability upon exposure. A resist composition comprising the sulfonium salt offers a high sensitivity, reduced LWR and improved CDU independent of whether it is of positive or negative tone.

公开(公告)号：US20240152048A1

公开(公告)日：2024-05-09

申请号：US18277113

申请日：2021-12-20

Applicant: JSR CORPORATION

Inventor： Ken MARUYAMA

IPC: G03F7/004 ,  C07C25/18 ,  C07C309/10 ,  C07C309/39 ,  C07C381/12 ,  C07D327/04 ,  C08F220/18 ,  C08F220/28 ,  C08F220/38 ,  G03F7/038 ,  G03F7/039

CPC classification number: G03F7/0045 ,  C07C25/18 ,  C07C309/10 ,  C07C309/39 ,  C07C381/12 ,  C07D327/04 ,  C08F220/1807 ,  C08F220/1812 ,  C08F220/283 ,  C08F220/382 ,  G03F7/038 ,  G03F7/039

Abstract: A radiation-sensitive resin composition includes: a resin including a structural unit represented by formula (1); at least one onium salt each including an organic acid anion moiety and an onium cation moiety; and a solvent. At least part of the organic acid anion moiety in the at least one onium salt includes an iodine-substituted aromatic ring structure. R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, Y1 is a divalent linking group, and X1 is an acid-dissociable group, and n is 0 or 1. When n is 0, X1 is represented by formula (s1) or (s2).

公开(公告)号：US20240061331A1

公开(公告)日：2024-02-22

申请号：US18485674

申请日：2023-10-12

Applicant: FUJIFILM Corporation

Inventor： Yosuke BEKKI ,  Masafumi KOJIMA ,  Akiyoshi GOTO ,  Nishiki FUJIMAKI

IPC: G03F7/004 ,  C07C25/02 ,  C07C309/42 ,  C07C381/12 ,  C07D307/00 ,  C07D307/12 ,  C07D307/33 ,  C07D309/12 ,  C07D327/06 ,  C07D333/46 ,  C07D333/76 ,  C07D493/18 ,  C08F220/18 ,  C08F220/28 ,  C08F220/38 ,  G03F7/038 ,  G03F7/039

CPC classification number: G03F7/0045 ,  C07C25/02 ,  C07C309/42 ,  C07C381/12 ,  C07D307/00 ,  C07D307/12 ,  C07D307/33 ,  C07D309/12 ,  C07D327/06 ,  C07D333/46 ,  C07D333/76 ,  C07D493/18 ,  C08F220/1806 ,  C08F220/1807 ,  C08F220/1809 ,  C08F220/281 ,  C08F220/382 ,  G03F7/038 ,  G03F7/039 ,  C07C2601/14 ,  C07C2602/42 ,  C07C2603/74

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a compound represented by general formula (S1) and an acid decomposable resin. In the general formula (S1), Q1, Q2, Q3, Q4, and Q5 each independently represent a hydrogen atom or a substituent, provided that at least one of Q1, Q2, Q3, Q4, or Q5 represents a substituent including an aryloxy group represented by general formula (QR1), Lq1 represents a single bond or a divalent linking group; and M+ represents an organic cation. In the general formula (QR1), G1, G2, G3, G4, and G5 each independently represent a hydrogen atom or a substituent, provided that at least one of G1, G2, G3, G4, or G5 represents a substituent including an ester group; and * represents a bonding position.

公开(公告)号：US20230322986A1

公开(公告)日：2023-10-12

申请号：US18251857

申请日：2022-11-02

Applicant: THE CHINESE UNIVERSITY OF HONG KONG, SHENZHEN

Inventor： Shiping ZHU ,  Xiaoqing MING ,  Le YAO ,  Qi ZHANG

IPC: C08F220/18 ,  C08K5/435 ,  C08K5/42

CPC classification number: C08F220/1807 ,  C08K5/42 ,  C08K5/435

Abstract: The present disclosure provides a humidity-stiffening polymer material, and a preparation method therefor and a use thereof. The humidity-stiffening polymer material includes the following raw materials: a monomer, an ionic liquid, a salt, a cross-linking agent and an initiator, wherein the monomer includes benzyl methacrylate, the ionic liquid includes an imidazole-based ionic liquid, and the salt includes a hygroscopic salt. The method for preparing the humidity-stiffening polymer material includes: mixing the raw materials to obtain a precursor liquid, performing reaction on the mixture after degassing, and drying the mixture to obtain the humidity-stiffening polymer material. The humidity-stiffening polymer material is applied to actuators, soft robots and wearable biomedical devices based on bionic design.
The present disclosure provides a humidity-stiffening polymer material, and a preparation method therefor and a use thereof. The humidity-stiffening polymer material includes the following raw materials: a monomer, an ionic liquid, a salt, a cross-linking agent and an initiator, wherein the monomer includes benzyl methacrylate, the ionic liquid includes an imidazole-based ionic liquid, and the salt includes a hygroscopic salt. The method for preparing the humidity-stiffening polymer material includes: mixing the raw materials to obtain a precursor liquid, performing reaction on the mixture after degassing, and drying the mixture to obtain the humidity-stiffening polymer material. The humidity-stiffening polymer material is applied to actuators, soft robots and wearable biomedical devices based on bionic design.

公开(公告)号：US20230303915A1

公开(公告)日：2023-09-28

申请号：US18190303

申请日：2023-03-27

Applicant: Samsung Display Co., Ltd.

Inventor： Shang Hyeun PARK ,  Tae Gon KIM ,  Shin Ae JUN

IPC: C09K11/02 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38 ,  C08F212/08 ,  C08F220/06 ,  C08F220/28 ,  C08K5/37 ,  C08K3/22 ,  C08F220/18

CPC classification number: C09K11/02 ,  C08F212/08 ,  C08F220/06 ,  C08F220/1807 ,  C08F220/281 ,  C08K3/22 ,  C08K5/37 ,  G03F7/2002 ,  G03F7/32 ,  G03F7/38 ,  B82Y20/00 ,  C08K2003/2241

Abstract: A quantum dot-polymer composite pattern including at least one repeating section configured to emit light of a predetermined wavelength, and a production method and a display device including the quantum dot-polymer composite are disclosed. The quantum dot-polymer composite includes a polymer matrix including linear polymer including a carboxylic acid group-containing repeating unit and a plurality of cadmium-free quantum dots dispersed in the polymer matrix, has an absorption rate of greater than or equal to about 85% for light at wavelength of about 450 nm, and has an area ratio of a hydroxy group peak relative to an acrylate peak of greater than or equal to about 2.6 in Fourier transform infrared spectroscopy.

公开(公告)号：US20230303746A1

公开(公告)日：2023-09-28

申请号：US18316322

申请日：2023-05-12

Applicant: MITSUI CHEMICALS, INC.

Inventor： Toshikazu Sakamaki

IPC: C08F222/10 ,  A61K6/887 ,  A61C13/087 ,  C08F2/48 ,  C08F20/30

CPC classification number: C08F222/1025 ,  A61C13/087 ,  A61K6/887 ,  C08F2/48 ,  C08F20/30 ,  C08F222/1063 ,  C08F220/1807

Abstract: The present invention provides a photocurable composition for use in stereolithography, the photocurable composition including: a (meth)acrylic monomer (X) that is at least one selected from the group consisting of di(meth)acrylic monomers containing, within one molecule, two aromatic rings and two (meth)acryloyloxy groups, and that has a weight average molecular weight of from 400 to 580; a (meth)acrylic monomer (D) that is at least one selected from the group consisting of (meth)acrylic monomers containing, within one molecule, at least one aromatic ring and one (meth)acryloyloxy group, and that has a weight average molecular weight of from 140 to 350; and a photopolymerization initiator.

公开(公告)号：US20230280651A1

公开(公告)日：2023-09-07

申请号：US18197244

申请日：2023-05-15

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Teppei ADACHI ,  Shinya YAMASHITA ,  Masaki OHASHI ,  Tomohiro KOBAYASHI ,  Kenichi OIKAWA ,  Takayuki FUJIWARA

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/11 ,  C07D307/93 ,  C07D493/18 ,  C07D327/04 ,  C08F220/18 ,  C07C381/12

CPC classification number: G03F7/0045 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/11 ,  C07D307/93 ,  C07D493/18 ,  C07D327/04 ,  C08F220/1807 ,  C08F220/1808 ,  C07C381/12 ,  G03F7/2006

Abstract: A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M+ represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source.

公开(公告)号：US11912913B2

公开(公告)日：2024-02-27

申请号：US18190303

申请日：2023-03-27

Applicant: Samsung Display Co., Ltd.

Inventor： Shang Hyeun Park ,  Tae Gon Kim ,  Shin Ae Jun

IPC: C09K11/02 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38 ,  C08F212/08 ,  C08F220/06 ,  C08F220/28 ,  C08K5/37 ,  C08K3/22 ,  C08F220/18 ,  B82Y20/00 ,  B82Y40/00

CPC classification number: C09K11/02 ,  C08F212/08 ,  C08F220/06 ,  C08F220/1807 ,  C08F220/281 ,  C08K3/22 ,  C08K5/37 ,  G03F7/2002 ,  G03F7/32 ,  G03F7/38 ,  B82Y20/00 ,  B82Y40/00 ,  C08K2003/2241

Abstract: A quantum dot-polymer composite pattern including at least one repeating section configured to emit light of a predetermined wavelength, and a production method and a display device including the quantum dot-polymer composite are disclosed. The quantum dot-polymer composite includes a polymer matrix including linear polymer including a carboxylic acid group-containing repeating unit and a plurality of cadmium-free quantum dots dispersed in the polymer matrix, has an absorption rate of greater than or equal to about 85% for light at wavelength of about 450 nm, and has an area ratio of a hydroxy group peak relative to an acrylate peak of greater than or equal to about 2.6 in Fourier transform infrared spectroscopy.

公开(公告)号：US11822242B2

公开(公告)日：2023-11-21

申请号：US17762589

申请日：2020-11-12

Applicant: Merck Patent GmbH

Inventor： Weihong Liu ,  Ping-Hung Lu ,  Chunwei Chen ,  Medhat A. Toukhy

IPC: G03F7/022 ,  G03F7/023 ,  G03F7/30 ,  C08F220/18 ,  C08F220/28

CPC classification number: G03F7/0233 ,  C08F220/1804 ,  C08F220/1807 ,  C08F220/281 ,  G03F7/0226 ,  G03F7/30

Abstract: Describe herein is a composition comprising: an acrylic polymer comprising repeat units selected from ones having structure (1), (2), (3), (4), (5), (6), and (7) wherein these repeat units are present in said acrylic polymer in the mole % ranges as described herein; a Novolak resin having a dissolution rate in 0.26 N aqueous TMAH of at least 50 Å/sec; a diazonaphthoquinone (DNQ) photoactive compound (PAC); and an organic spin casting solvent, and a process of using said composition as a positive photoresist developable in aqueous base.