公开(公告)号：US20180308705A1

公开(公告)日：2018-10-25

申请号：US16023836

申请日：2018-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： SHIGENOBU MAEDA ,  Jeong Ju PARK ,  Eunsung KIM ,  Hyunwoo KIM ,  Shiyong YI

IPC: H01L21/308 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/3086 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/32139

Abstract: A method includes forming mask patterns spaced apart from each other by at least one opening on an etch target layer, filling the opening with a block copolymer material including first and second polymer blocks of different properties, and annealing the block copolymer material to form first patterns and second patterns, the first patterns in contact with facing sidewalls of adjacent ones of the mask patterns, respectively, and at least one of the second patterns between the first patterns. The first patterns include the first polymer blocks and the second patterns include the second polymer blocks.