公开(公告)号：US10459348B2

公开(公告)日：2019-10-29

申请号：US16053192

申请日：2018-08-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung-Ho Jung ,  Ji-Hoon Kang ,  Sean Park ,  Sung-Won Park ,  Jae-Min Lee

IPC: H04N7/18 ,  G01N21/95 ,  G03F7/20

Abstract: Inspection system for a device under test (DUT) includes an image sensor, N image obtaining devices, K switches, M image processing devices, and at least one added image processing device. The image obtaining devices are connected to the image sensor, and each of the N image obtaining devices receives image data of the image of the DUT captured by the image sensor. Each of the K switches is connected to a respective one of the image obtaining devices. Each of the M image processing devices is connected to a respective one of the switches, receives the image data that is output from one of the N image obtaining devices and is distributed by one of the K switches, and generates processed image data in real-time. The added image processing device is connected to one of the switches, receives the image data, and generates additional processed image data in real-time.

公开(公告)号：US11424392B2

公开(公告)日：2022-08-23

申请号：US17063753

申请日：2020-10-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-hee Kang ,  Ji-Hoon Kang ,  Seong-woo Cho

IPC: H01L33/50 ,  H01L33/60 ,  H01L33/10 ,  H01L33/62 ,  H01L33/20 ,  H01L25/075 ,  H01L33/46 ,  H01L33/00

Abstract: A manufacturing method of a light emitting diode apparatus is provided. This method includes forming a light emitting diode on the substrate, forming a light leakage preventing layer to surround the side surface of the light emitting diode, etching a region corresponding to the light emitting diode in the substrate, and bonding a wavelength converting material to a lower portion of the light emitting diode in the etched region, in which the wavelength converting material includes a semiconductor layer including a quantum well layer.

公开(公告)号：US20210020811A1

公开(公告)日：2021-01-21

申请号：US17063753

申请日：2020-10-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-hee Kang ,  Ji-Hoon Kang ,  Seong-woo Cho

IPC: H01L33/50 ,  H01L33/60 ,  H01L33/62 ,  H01L33/20 ,  H01L25/075 ,  H01L33/46 ,  H01L33/00

Abstract: A manufacturing method of a light emitting diode apparatus is provided. This method includes forming a light emitting diode on the substrate, forming a light leakage preventing layer to surround the side surface of the light emitting diode, etching a region corresponding to the light emitting diode in the substrate, and bonding a wavelength converting material to a lower portion of the light emitting diode in the etched region, in which the wavelength converting material includes a semiconductor layer including a quantum well layer.

公开(公告)号：US10818826B2

公开(公告)日：2020-10-27

申请号：US15904876

申请日：2018-02-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-hee Kang ,  Ji-Hoon Kang ,  Seong-woo Cho

IPC: H01L33/50 ,  H01L33/60 ,  H01L33/62 ,  H01L33/20 ,  H01L25/075 ,  H01L33/46 ,  H01L33/00

Abstract: A manufacturing method of a light emitting diode apparatus is provided. This method includes forming a light emitting diode on the substrate, forming a light leakage preventing layer to surround the side surface of the light emitting diode, etching a region corresponding to the light emitting diode in the substrate, and bonding a wavelength converting material to a lower portion of the light emitting diode in the etched region, in which the wavelength converting material includes a semiconductor layer including a quantum well layer.

公开(公告)号：US10690318B2

公开(公告)日：2020-06-23

申请号：US15646804

申请日：2017-07-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yasuhiro Nishida ,  Dae-sik Kim ,  Tetsuya Shigeta ,  Ji-Hoon Kang

IPC: F21V9/00 ,  F21V9/30 ,  F21V9/08 ,  F21V5/04 ,  F21V11/00 ,  F21V5/00 ,  H01L33/50 ,  H01L33/58 ,  H01L33/44

Abstract: A light emitting diode (LED) apparatus is provided. The LED apparatus includes: an LED layer including a plurality of LEDs corresponding to a plurality of sub-pixels; a phosphor layer which is stacked on a top of the LED layer and includes a phosphor corresponding to at least a part of the plurality of sub-pixels; and a filter layer which is stacked on a top of the phosphor layer and includes a plurality of color filters corresponding to the plurality of sub-pixels, and each of the plurality of color filters includes a plurality of absorption films which are spaced from one another at predetermined intervals to absorb external light.

公开(公告)号：US10586893B2

公开(公告)日：2020-03-10

申请号：US15923754

申请日：2018-03-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-mo Kang ,  Ji-Hoon Kang ,  Seong-woo Cho ,  Ji-young Kang

IPC: H01L33/38 ,  H01L33/14 ,  H01L33/20 ,  H01L33/44 ,  H01L33/00 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42 ,  H01L33/06

Abstract: A method of manufacturing a light emitting diode (LED) is provided. The method includes forming an n-type semiconductor layer on a substrate, forming an n-type electrode in a first region of the n-type semiconductor layer, forming an active layer in a second region of the n-type semiconductor layer, the second region being a region other than the first region, forming a p-type semiconductor layer on the active layer, and forming a resistance layer by etching regions of the active layer and the p-type semiconductor layer.