公开(公告)号：US20200243523A1

公开(公告)日：2020-07-30

申请号：US16531327

申请日：2019-08-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Boong LEE ,  Jae-Ho PARK ,  Sang-Hoon BAEK ,  Ji-Su YU ,  Seung-Young LEE ,  Jong-Hoon JUNG

IPC: H01L27/092 ,  H01L29/06

Abstract: A semiconductor device includes first group active fins and a first diffusion prevention pattern. The first group active fins are spaced apart from each other in a second direction, and each of the first group active fins extends in a first direction different from the second direction on a first region of a substrate including the first region and a second region. The first diffusion prevention pattern extends on the first region of the substrate in the second direction through the first group active fins. The first group active fins include first and second active fins. The first diffusion prevention pattern extends through a central portion of the first active fin in the first direction to divide the first active fin, and extends through and contacts an end of the second active fin in the first direction.

公开(公告)号：US20210013230A1

公开(公告)日：2021-01-14

申请号：US17034602

申请日：2020-09-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-ho DO ,  Ji-Su YU ,  Hyeon-gyu YOU ,  Seung-Young LEE ,  Jae-boong LEE ,  Jong-hoon JUNG

IPC: H01L27/118 ,  H01L27/02

Abstract: An integrated circuit includes a standard cell. The standard cell may include a plurality of gate lines and a plurality of first wirings. The plurality of first wirings may include a clubfoot structure conductive pattern that includes a first conductive pattern and a second conductive pattern spaced apart from each other. Each of the first conductive pattern and the second conductive pattern may include a first line pattern extending in a first direction and a second line pattern protruding from one end of the first line pattern in a direction perpendicular to the first direction. The plurality of gate lines may be spaced apart from each other by a first pitch in the first direction, and the plurality of second wirings may be spaced apart from each other by a second pitch in the first direction. The first pitch may be greater than the second pitch.

公开(公告)号：US20200159984A1

公开(公告)日：2020-05-21

申请号：US16750501

申请日：2020-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-ho DO ,  Jong-hoon JUNG ,  Ji-Su YU ,  Seung-young LEE ,  Tae-joong SONG ,  Jae-boong LEE

IPC: G06F30/398 ,  H01L27/118 ,  H01L27/02 ,  G06F30/392

Abstract: Provided is an integrated circuit including a plurality of standard cells each including a front-end-of-line (FEOL) region and a back-end-of-line (BEOL) region on the FEOL region, the FEOL region including at least one gate line extending in a first horizontal direction. A BEOL region of a first standard cell among the plurality of standard cells includes an eaves section not overlapping an FEOL region of the first standard cell in a vertical direction, the eaves section protruding in a second horizontal direction perpendicular to the first horizontal direction.