公开(公告)号：US20170133333A1

公开(公告)日：2017-05-11

申请号：US15295104

申请日：2016-10-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-Young Kim ,  Sun-Won Kang ,  Jin-Chan Ahn

IPC: H01L23/00

CPC classification number: H01L24/02 ,  H01L24/05 ,  H01L24/16 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/02166 ,  H01L2224/0233 ,  H01L2224/0235 ,  H01L2224/02373 ,  H01L2224/02375 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/04073 ,  H01L2224/13101 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00

Abstract: Provided are a semiconductor device and a semiconductor package including the same. The semiconductor device comprises a semiconductor chip body including a first chip pad on a top surface, a passivation film disposed on the semiconductor chip body and a first redistribution layer that is disposed between the passivation film and the semiconductor chip body with an opening to expose a first chip center pad region at least partially overlapping the first chip pad, a first redistribution center pad region connected to the first chip center pad region, and a first edge pad region spaced apart from the first redistribution center pad region, through the passivation film, wherein a top surface of the first chip center pad region and a top surface of the first redistribution center pad region are not disposed on the same plane.

公开(公告)号：US10784216B2

公开(公告)日：2020-09-22

申请号：US16393135

申请日：2019-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-Young Kim ,  Sun-Won Kang ,  Jin-Chan Ahn

IPC: H01L23/00

Abstract: Provided are a semiconductor device and a semiconductor package including the same. The semiconductor device comprises a semiconductor chip body including a first chip pad on a top surface, a passivation film disposed on the semiconductor chip body and a first redistribution layer that is disposed between the passivation film and the semiconductor chip body with an opening to expose a first chip center pad region at least partially overlapping the first chip pad, a first redistribution center pad region connected to the first chip center pad region, and a first edge pad region spaced apart from the first redistribution center pad region, through the passivation film, wherein a top surface of the first chip center pad region and a top surface of the first redistribution center pad region are not disposed on the same plane.

公开(公告)号：US20190252332A1

公开(公告)日：2019-08-15

申请号：US16393135

申请日：2019-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-Young Kim ,  Sun-Won Kang ,  Jin-Chan Ahn

IPC: H01L23/00

CPC classification number: H01L24/02 ,  H01L24/05 ,  H01L24/16 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/02166 ,  H01L2224/0233 ,  H01L2224/0235 ,  H01L2224/02373 ,  H01L2224/02375 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/04073 ,  H01L2224/13101 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00

Abstract: Provided are a semiconductor device and a semiconductor package including the same. The semiconductor device comprises a semiconductor chip body including a first chip pad on a top surface, a passivation film disposed on the semiconductor chip body and a first redistribution layer that is disposed between the passivation film and the semiconductor chip body with an opening to expose a first chip center pad region at least partially overlapping the first chip pad, a first redistribution center pad region connected to the first chip center pad region, and a first edge pad region spaced apart from the first redistribution center pad region, through the passivation film, wherein a top surface of the first chip center pad region and a top surface of the first redistribution center pad region are not disposed on the same plane.

公开(公告)号：US10297559B2

公开(公告)日：2019-05-21

申请号：US15295104

申请日：2016-10-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-Young Kim ,  Sun-Won Kang ,  Jin-Chan Ahn

IPC: H01L23/00

Abstract: Provided are a semiconductor device and a semiconductor package including the same. The semiconductor device comprises a semiconductor chip body including a first chip pad on a top surface, a passivation film disposed on the semiconductor chip body and a first redistribution layer that is disposed between the passivation film and the semiconductor chip body with an opening to expose a first chip center pad region at least partially overlapping the first chip pad, a first redistribution center pad region connected to the first chip center pad region, and a first edge pad region spaced apart from the first redistribution center pad region, through the passivation film, wherein a top surface of the first chip center pad region and a top surface of the first redistribution center pad region are not disposed on the same plane.