公开(公告)号：US20190252332A1

公开(公告)日：2019-08-15

申请号：US16393135

申请日：2019-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-Young Kim ,  Sun-Won Kang ,  Jin-Chan Ahn

IPC: H01L23/00

CPC classification number: H01L24/02 ,  H01L24/05 ,  H01L24/16 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/02166 ,  H01L2224/0233 ,  H01L2224/0235 ,  H01L2224/02373 ,  H01L2224/02375 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/04073 ,  H01L2224/13101 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00

Abstract: Provided are a semiconductor device and a semiconductor package including the same. The semiconductor device comprises a semiconductor chip body including a first chip pad on a top surface, a passivation film disposed on the semiconductor chip body and a first redistribution layer that is disposed between the passivation film and the semiconductor chip body with an opening to expose a first chip center pad region at least partially overlapping the first chip pad, a first redistribution center pad region connected to the first chip center pad region, and a first edge pad region spaced apart from the first redistribution center pad region, through the passivation film, wherein a top surface of the first chip center pad region and a top surface of the first redistribution center pad region are not disposed on the same plane.

公开(公告)号：US10297559B2

公开(公告)日：2019-05-21

申请号：US15295104

申请日：2016-10-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-Young Kim ,  Sun-Won Kang ,  Jin-Chan Ahn

IPC: H01L23/00

Abstract: Provided are a semiconductor device and a semiconductor package including the same. The semiconductor device comprises a semiconductor chip body including a first chip pad on a top surface, a passivation film disposed on the semiconductor chip body and a first redistribution layer that is disposed between the passivation film and the semiconductor chip body with an opening to expose a first chip center pad region at least partially overlapping the first chip pad, a first redistribution center pad region connected to the first chip center pad region, and a first edge pad region spaced apart from the first redistribution center pad region, through the passivation film, wherein a top surface of the first chip center pad region and a top surface of the first redistribution center pad region are not disposed on the same plane.

公开(公告)号：US10756062B2

公开(公告)日：2020-08-25

申请号：US16359097

申请日：2019-03-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyoung-Soo Kim ,  Seung-Duk Baek ,  Sun-Won Kang ,  Ho-Geon Song ,  Gun-Ho Chang

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L25/065 ,  H01L23/00 ,  H01L23/528 ,  H01L23/31 ,  H01L23/498

Abstract: A semiconductor chip includes a semiconductor substrate, a through electrode, an inter-mediation pad, an upper pad, and a rewiring line. The semiconductor substrate includes a first surface that is an active surface and a second surface that is opposite to the first surface. The through electrode penetrates the semiconductor substrate and is disposed in at least one column in a first direction in a center portion of the semiconductor substrate. The inter-mediation pad is disposed in at least one column in the first direction in an edge portion of the second surface. The upper pad is disposed on the second surface and connected to the through electrode. The rewiring line is disposed on the second surface and connects the inter-mediation pad to the upper pad.

公开(公告)号：US10784216B2

公开(公告)日：2020-09-22

申请号：US16393135

申请日：2019-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-Young Kim ,  Sun-Won Kang ,  Jin-Chan Ahn

IPC: H01L23/00

Abstract: Provided are a semiconductor device and a semiconductor package including the same. The semiconductor device comprises a semiconductor chip body including a first chip pad on a top surface, a passivation film disposed on the semiconductor chip body and a first redistribution layer that is disposed between the passivation film and the semiconductor chip body with an opening to expose a first chip center pad region at least partially overlapping the first chip pad, a first redistribution center pad region connected to the first chip center pad region, and a first edge pad region spaced apart from the first redistribution center pad region, through the passivation film, wherein a top surface of the first chip center pad region and a top surface of the first redistribution center pad region are not disposed on the same plane.

公开(公告)号：US20200013753A1

公开(公告)日：2020-01-09

申请号：US16359097

申请日：2019-03-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyoung-Soo Kim ,  Seung-Duk Baek ,  Sun-Won Kang ,  Ho-Geon Song ,  Gun-Ho Chang

IPC: H01L25/065 ,  H01L23/48 ,  H01L23/00 ,  H01L23/528 ,  H01L23/31 ,  H01L23/498

Abstract: A semiconductor chip includes a semiconductor substrate, a through electrode, an inter-mediation pad, an upper pad, and a rewiring line. The semiconductor substrate includes a first surface that is an active surface and a second surface that is opposite to the first surface. The through electrode penetrates the semiconductor substrate and is disposed in at least one column in a first direction in a center portion of the semiconductor substrate. The inter-mediation pad is disposed in at least one column in the first direction in an edge portion of the second surface. The upper pad is disposed on the second surface and connected to the through electrode. The rewiring line is disposed on the second surface and connects the inter-mediation pad to the upper pad.

公开(公告)号：US20170133333A1

公开(公告)日：2017-05-11

申请号：US15295104

申请日：2016-10-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-Young Kim ,  Sun-Won Kang ,  Jin-Chan Ahn

IPC: H01L23/00

CPC classification number: H01L24/02 ,  H01L24/05 ,  H01L24/16 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/02166 ,  H01L2224/0233 ,  H01L2224/0235 ,  H01L2224/02373 ,  H01L2224/02375 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/04073 ,  H01L2224/13101 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00

Abstract: Provided are a semiconductor device and a semiconductor package including the same. The semiconductor device comprises a semiconductor chip body including a first chip pad on a top surface, a passivation film disposed on the semiconductor chip body and a first redistribution layer that is disposed between the passivation film and the semiconductor chip body with an opening to expose a first chip center pad region at least partially overlapping the first chip pad, a first redistribution center pad region connected to the first chip center pad region, and a first edge pad region spaced apart from the first redistribution center pad region, through the passivation film, wherein a top surface of the first chip center pad region and a top surface of the first redistribution center pad region are not disposed on the same plane.