公开(公告)号：US09379122B2

公开(公告)日：2016-06-28

申请号：US14600577

申请日：2015-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Hyun Shin ,  Jae-Bok Baek

IPC: H01L27/115 ,  H01L29/788 ,  H01L29/06 ,  H01L21/764 ,  G11C5/06 ,  G11C16/04

CPC classification number: H01L27/11524 ,  G11C5/063 ,  G11C16/0483 ,  H01L21/764 ,  H01L29/0649 ,  H01L29/7883

Abstract: A memory device includes an array of floating gate memory cells. Adjacent memory cells are separated by a plurality of air gaps that electrically decouple respective active regions of adjacent memory cells from one another. Additionally, the air gaps electrically decouple an active region of a memory cell from a floating gate of an adjacent memory cell.

Abstract translation: 存储器件包括浮动栅极存储器单元阵列。 相邻的存储器单元被多个气隙隔开，这些气隙将相邻存储器单元的相应有源区彼此电分离。 此外，气隙将存储器单元的有源区域与相邻存储单元的浮动栅极电耦合。