公开(公告)号：US09653551B2

公开(公告)日：2017-05-16

申请号：US14980134

申请日：2015-12-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changwoo Oh ,  Myung Gil Kang ,  Bomsoo Kim ,  Jongshik Yoon

IPC: H01L27/12 ,  H01L29/10 ,  H01L21/84 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/78 ,  H01L27/092 ,  H01L27/088 ,  H01L29/06 ,  H01L29/423

CPC classification number: H01L29/1041 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/063 ,  H01L29/0649 ,  H01L29/0676 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/785

Abstract: Field effect transistors are provided. According to the field effect transistor, a source region and a drain region are provided on a substrate and a fin portion is provided to protrude from the substrate. The fin portion connects the source region and the drain region to each other. A gate electrode pattern is disposed on the fin portion and extends to cross over the fin portion. A gate dielectric layer is disposed between the fin portion and the gate electrode pattern. A semiconductor layer is disposed between the fin portion and the gate dielectric layer. The semiconductor layer and the fin portion have dopant-concentrations different from each other, respectively.