公开(公告)号：US20240160115A1

公开(公告)日：2024-05-16

申请号：US18347129

申请日：2023-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wooyong JUNG ,  Dohun KIM ,  Joonhyun KIM ,  Jeongjin LEE ,  Seungyoon LEE ,  Chan HWANG

IPC: G03F7/00 ,  H01L21/027

CPC classification number: G03F7/70633 ,  G03F7/706839 ,  H01L21/027

Abstract: Provided are an overlay correction method for effectively correcting an overlay due to degradation of a wafer table, and an exposure method and a semiconductor device manufacturing method, which include the overlay correction method, wherein the overlay correction method includes acquiring leveling data regarding a wafer, converting the leveling data into overlay data, splitting a shot into sub-shots via shot size split, extracting a model for each sub-shot from the overlay data, and correcting an overlay parameter of exposure equipment on the basis of the model for each sub-shot, wherein the correction of the overlay parameter is applied in real time to an exposure process for the wafer in a feedforward method.