公开(公告)号：US20210296211A1

公开(公告)日：2021-09-23

申请号：US17344138

申请日：2021-06-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju-Bin SEO ,  Su-Jeong Park ,  Tae-Seong Kim ,  Kwang-Jin Moon ,  Dong-Chan Lim ,  Ju-Il Choi

IPC: H01L23/48 ,  H01L21/768 ,  H01L23/31 ,  H01L27/146

Abstract: A semiconductor device is provided. The semiconductor device includes a first insulating interlayer disposed on a first surface of a substrate; a pad pattern disposed on a lower surface of the first insulating interlayer, the pad pattern including a first copper pattern; and a through silicon via passing through the substrate and the first insulating interlayer, and contacting the first copper pattern of the pad pattern. The through silicon via includes a first portion passing through the substrate and the first insulating interlayer, and a second portion under the first portion and extending to a portion of the first copper pattern in the pad pattern. A boundary of the through silicon via has a bent portion between the first portion and the second portion.

公开(公告)号：US20150207038A1

公开(公告)日：2015-07-23

申请号：US14501232

申请日：2014-09-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Wook HWANG ,  Ju-Bin SEO ,  Ji-Hye YEON ,  Geon-Wook YOO ,  Dong-hoon LEE

IPC: H01L33/46 ,  H01L33/40 ,  H01L33/42 ,  H01L33/08 ,  H01L33/24

CPC classification number: H01L33/46 ,  F21K9/232 ,  F21Y2115/10 ,  H01L33/08 ,  H01L33/24 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/54 ,  H01L2224/16225

Abstract: A semiconductor light-emitting device includes a first conductive type semiconductor layer having a main surface, a plurality of vertical type light-emitting structures protruding upward from the first conductive type semiconductor layer; a transparent electrode layer covering the plurality of vertical type light-emitting structures; and an insulation-filling layer disposed on the transparent electrode layer. The insulation-filling layer extends parallel to the first conductive type semiconductor layer so as to cover the plurality of vertical type light-emitting structures. A selected one of the first conductive type semiconductor layer and the insulation-filling layer, which is disposed on a light transmission path through which light generated from the plurality of vertical type light-emitting structures is radiated externally, has an uneven outer surface. The uneven outer surface is opposite to an inner surface of the selected one, and the inner surface faces the plurality of vertical type light-emitting structures.

Abstract translation: 半导体发光器件包括具有主表面的第一导电类型半导体层，从第一导电类型半导体层向上突出的多个垂直型发光结构; 覆盖多个垂直型发光结构的透明电极层; 以及设置在所述透明电极层上的绝缘填充层。 绝缘填充层平行于第一导电类型半导体层延伸以覆盖多个垂直型发光结构。 设置在从多个垂直型发光结构产生的光从外部照射的光传输路径上的第一导电类型半导体层和绝缘填充层中选择的一个具有不平坦的外表面。 不平坦的外表面与所选择的外表面的内表面相反，并且内表面面向多个垂直型发光结构。