METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE PACKAGE SUCH AS LIGHT-EMITTING DIODE PACKAGE
    1.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE PACKAGE SUCH AS LIGHT-EMITTING DIODE PACKAGE 审中-公开
    制造半导体器件封装的方法如发光二极管封装

    公开(公告)号:US20160284927A1

    公开(公告)日:2016-09-29

    申请号:US15067868

    申请日:2016-03-11

    Abstract: Provided is a method of manufacturing a light-emitting diode (LED) package. The method includes: preparing a support structure on which a plurality of LED chips, each of which includes a semiconductor stack structure, and a light-transmissive material layer covering the plurality of LED chips are formed; mounting the support structure, on which the LED chips and the light-transmissive material layer are formed, on a cutting stage; and cutting the light-transmissive material layer, the semiconductor stack structure, and the support structure between the plurality of LED chips, by using a cutting device having a pattern blade on the cutting stage to singulate each of the individual LED packages.

    Abstract translation: 提供一种制造发光二极管(LED)封装的方法。 该方法包括:制备其上包括半导体堆叠结构的多个LED芯片和覆盖多个LED芯片的透光材料层的支撑结构; 在切割台上安装其上形成有LED芯片和透光材料层的支撑结构; 以及通过使用在所述切割台上具有图案刮刀的切割装置来切割所述多个LED芯片之间的所述透光材料层,所述半导体堆叠结构和所述支撑结构,以对所述各个LED封装进行单片化。

    NANO-STRUCTURED LIGHT-EMITTING DEVICES
    3.
    发明申请
    NANO-STRUCTURED LIGHT-EMITTING DEVICES 审中-公开
    纳米结构发光器件

    公开(公告)号:US20160163922A1

    公开(公告)日:2016-06-09

    申请号:US15042283

    申请日:2016-02-12

    CPC classification number: H01L33/08 H01L27/156 H01L33/24 H01L33/387

    Abstract: Provided is a nano-structured light-emitting device including: a first type semiconductor layer; a plurality of nanostructures which are formed on the first type semiconductor layer and include nanocores, and active layers and second type semiconductor layers that enclose surfaces of the nanocores; an electrode layer which encloses and covers the plurality of nanostructures; and a plurality of resistant layers which are formed on the electrode layer and respectively correspond to the plurality of nanostructures.

    Abstract translation: 本发明提供一种纳米结构发光器件,其包括:第一类型半导体层; 形成在第一类型半导体层上并包括纳米孔的多个纳米结构体,以及包围纳米孔表面的活性层和第二类型半导体层; 包围并覆盖多个纳米结构的电极层; 以及形成在电极层上并分别对应于多个纳米结构的多个电阻层。

    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    5.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号:US20150207038A1

    公开(公告)日:2015-07-23

    申请号:US14501232

    申请日:2014-09-30

    Abstract: A semiconductor light-emitting device includes a first conductive type semiconductor layer having a main surface, a plurality of vertical type light-emitting structures protruding upward from the first conductive type semiconductor layer; a transparent electrode layer covering the plurality of vertical type light-emitting structures; and an insulation-filling layer disposed on the transparent electrode layer. The insulation-filling layer extends parallel to the first conductive type semiconductor layer so as to cover the plurality of vertical type light-emitting structures. A selected one of the first conductive type semiconductor layer and the insulation-filling layer, which is disposed on a light transmission path through which light generated from the plurality of vertical type light-emitting structures is radiated externally, has an uneven outer surface. The uneven outer surface is opposite to an inner surface of the selected one, and the inner surface faces the plurality of vertical type light-emitting structures.

    Abstract translation: 半导体发光器件包括具有主表面的第一导电类型半导体层,从第一导电类型半导体层向上突出的多个垂直型发光结构; 覆盖多个垂直型发光结构的透明电极层; 以及设置在所述透明电极层上的绝缘填充层。 绝缘填充层平行于第一导电类型半导体层延伸以覆盖多个垂直型发光结构。 设置在从多个垂直型发光结构产生的光从外部照射的光传输路径上的第一导电类型半导体层和绝缘填充层中选择的一个具有不平坦的外表面。 不平坦的外表面与所选择的外表面的内表面相反,并且内表面面向多个垂直型发光结构。

    NANO-STRUCTURED LIGHT-EMITTING DEVICES
    6.
    发明申请
    NANO-STRUCTURED LIGHT-EMITTING DEVICES 有权
    纳米结构发光器件

    公开(公告)号:US20140166974A1

    公开(公告)日:2014-06-19

    申请号:US14106186

    申请日:2013-12-13

    CPC classification number: H01L33/08 H01L27/156 H01L33/24 H01L33/387

    Abstract: A nano-structured light-emitting device includes a plurality of light-emitting nanostructures each having a resistant layer disposed thereon. The device includes a first semiconductor layer of a first conductivity type, and a plurality of nanostructures disposed on the first semiconductor layer. Each nanostructure includes a nanocore, and an active layer and a second semiconductor layer of a second conductivity type that enclose surfaces of the nanocores. An electrode layer encloses and covers the plurality of nanostructures A plurality of resistant layers are disposed on the electrode layer and each corresponds to a respective nanostructure of the plurality of nanostructures.

    Abstract translation: 纳米结构发光器件包括多个发光纳米结构,每个发光纳米结构具有设置在其上的电阻层。 该器件包括第一导电类型的第一半导体层和设置在第一半导体层上的多个纳米结构。 每个纳米结构包括纳米孔,以及包围纳米孔表面的第二导电类型的有源层和第二半导体层。 包围并覆盖多个纳米结构的电极层多个电阻层设置在电极层上,并且每个对应于多个纳米结构的相应纳米结构。

    LIGHT-EMITTING DEVICE HAVING DIELECTRIC REFLECTOR AND METHOD OF MANUFACTURING THE SAME
    8.
    发明申请
    LIGHT-EMITTING DEVICE HAVING DIELECTRIC REFLECTOR AND METHOD OF MANUFACTURING THE SAME 有权
    具有电介质反射器的发光装置及其制造方法

    公开(公告)号:US20130341658A1

    公开(公告)日:2013-12-26

    申请号:US13873688

    申请日:2013-04-30

    Abstract: A light-emitting device includes a first conductive semiconductor layer formed on a substrate, a mask layer formed on the first conductive semiconductor layer and having a plurality of holes, a plurality of vertical light-emitting structures vertically grown on the first conductive semiconductor layer through the plurality of holes, a current diffusion layer surrounding the plurality of vertical light-emitting structures on the first conductive semiconductor layer, and a dielectric reflector filling a space between the plurality of vertical light-emitting structures on the current diffusion layer.

    Abstract translation: 发光装置包括形成在基板上的第一导电半导体层,形成在第一导电半导体层上并具有多个孔的掩模层,在第一导电半导体层上垂直生长的多个垂直发光结构,通过 所述多个孔,围绕所述第一导电半导体层上的所述多个垂直发光结构的电流扩散层,以及填充所述电流扩散层上的所述多个垂直发光结构之间的空间的电介质反射器。

    NANO-STRUCTURED LIGHT-EMITTING DEVICE AND METHODS FOR MANUFACTURING THE SAME
    10.
    发明申请
    NANO-STRUCTURED LIGHT-EMITTING DEVICE AND METHODS FOR MANUFACTURING THE SAME 有权
    纳米结构发光装置及其制造方法

    公开(公告)号:US20140124732A1

    公开(公告)日:2014-05-08

    申请号:US14071411

    申请日:2013-11-04

    Abstract: A nano-structured light-emitting device including a first semiconductor layer; a nano structure formed on the first semiconductor layer. The nano structure includes a nanocore, and an active layer and a second semiconductor layer that are formed on a surface of the nanocore, and of which the surface is planarized. A conductive layer surrounds sides of the nano structure, a first electrode is electrically connected to the first semiconductor layer and a second electrode is electrically connected to the conductive layer.

    Abstract translation: 一种纳米结构的发光器件,包括第一半导体层; 形成在第一半导体层上的纳米结构。 纳米结构包括纳米孔,以及形成在纳米孔的表面上并且其表面被平坦化的有源层和第二半导体层。 导电层包围纳米结构的侧面,第一电极电连接到第一半导体层,第二电极电连接到导电层。

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