公开(公告)号：US20150207038A1

公开(公告)日：2015-07-23

申请号：US14501232

申请日：2014-09-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Wook HWANG ,  Ju-Bin SEO ,  Ji-Hye YEON ,  Geon-Wook YOO ,  Dong-hoon LEE

IPC: H01L33/46 ,  H01L33/40 ,  H01L33/42 ,  H01L33/08 ,  H01L33/24

CPC classification number: H01L33/46 ,  F21K9/232 ,  F21Y2115/10 ,  H01L33/08 ,  H01L33/24 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/54 ,  H01L2224/16225

Abstract: A semiconductor light-emitting device includes a first conductive type semiconductor layer having a main surface, a plurality of vertical type light-emitting structures protruding upward from the first conductive type semiconductor layer; a transparent electrode layer covering the plurality of vertical type light-emitting structures; and an insulation-filling layer disposed on the transparent electrode layer. The insulation-filling layer extends parallel to the first conductive type semiconductor layer so as to cover the plurality of vertical type light-emitting structures. A selected one of the first conductive type semiconductor layer and the insulation-filling layer, which is disposed on a light transmission path through which light generated from the plurality of vertical type light-emitting structures is radiated externally, has an uneven outer surface. The uneven outer surface is opposite to an inner surface of the selected one, and the inner surface faces the plurality of vertical type light-emitting structures.

Abstract translation: 半导体发光器件包括具有主表面的第一导电类型半导体层，从第一导电类型半导体层向上突出的多个垂直型发光结构; 覆盖多个垂直型发光结构的透明电极层; 以及设置在所述透明电极层上的绝缘填充层。 绝缘填充层平行于第一导电类型半导体层延伸以覆盖多个垂直型发光结构。 设置在从多个垂直型发光结构产生的光从外部照射的光传输路径上的第一导电类型半导体层和绝缘填充层中选择的一个具有不平坦的外表面。 不平坦的外表面与所选择的外表面的内表面相反，并且内表面面向多个垂直型发光结构。

公开(公告)号：US20140367727A1

公开(公告)日：2014-12-18

申请号：US14473709

申请日：2014-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Hoon LEE ,  Geon-Wook YOO ,  Nam-Goo CHA ,  Kyung-Wook HWANG

IPC: H01L33/60

CPC classification number: H01L33/60 ,  B82Y20/00 ,  H01L27/15 ,  H01L33/08 ,  H01L33/14 ,  H01L33/24 ,  H01L33/46 ,  Y10S977/762 ,  Y10S977/949 ,  Y10S977/95

Abstract: A light-emitting device includes a first conductive semiconductor layer formed on a substrate, a mask layer formed on the first conductive semiconductor layer and having a plurality of holes, a plurality of vertical light-emitting structures vertically grown on the first conductive semiconductor layer through the plurality of holes, a current diffusion layer surrounding the plurality of vertical light-emitting structures on the first conductive semiconductor layer, and a dielectric reflector filling a space between the plurality of vertical light-emitting structures on the current diffusion layer.

Abstract translation: 发光装置包括形成在基板上的第一导电半导体层，形成在第一导电半导体层上并具有多个孔的掩模层，在第一导电半导体层上垂直生长的多个垂直发光结构，通过 所述多个孔，围绕所述第一导电半导体层上的所述多个垂直发光结构的电流扩散层，以及填充所述电流扩散层上的所述多个垂直发光结构之间的空间的电介质反射器。

公开(公告)号：US20140191264A1

公开(公告)日：2014-07-10

申请号：US14034391

申请日：2013-09-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Sub KIM ,  Kyung-Wook HWANG ,  Deok-Kyu KIM ,  Cheol-Soo SONE

IPC: H01L33/58

CPC classification number: H01L33/02

Abstract: There is provided a semiconductor light-emitting device including a substrate having a first refractive index, a nitride semiconductor layer formed on the substrate and having a second refractive index that is different from the first refractive index, a light-emitting structure formed on the nitride semiconductor layer and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, and an optical extraction film disposed between the substrate and the nitride semiconductor layer and having a refractive index between the first refractive index and the second refractive index.

Abstract translation: 提供了一种半导体发光器件，包括具有第一折射率的衬底，形成在衬底上的具有不同于第一折射率的第二折射率的氮化物半导体层，形成在氮化物上的发光结构 半导体层并且包括第一导电半导体层，有源层和第二导电半导体层，以及光学提取膜，其设置在所述衬底和所述氮化物半导体层之间并且具有所述第一折射率和所述第二折射率之间的折射率 。