公开(公告)号：US09536884B2

公开(公告)日：2017-01-03

申请号：US14450854

申请日：2014-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Soo Kim ,  Dong-Soo Woo ,  Se-myeong Jang

IPC: H01L27/115 ,  H01L27/108

CPC classification number: H01L27/10891 ,  H01L27/10876

Abstract: A semiconductor device can include a substrate including a plurality of active regions having a long axis in a first direction and a short axis in a second direction, the plurality of active regions being repeatedly and separately positioned along the first and second directions, an isolation film defining the plurality of active regions, a plurality of word lines extending across the plurality of active regions and the isolation film, and a positive fixed charge containing layer covering at least a portion of the plurality of word lines, respectively.

Abstract translation: 半导体器件可以包括：衬底，其包括在第一方向上具有长轴和在第二方向上具有短轴的多个有源区，所述多个有源区沿着所述第一和第二方向重复且分开地定位;隔离膜 限定多个有源区域，跨越多个有源区域和隔离膜延伸的多个字线，以及分别覆盖多个字线的至少一部分的正固定电荷含有层。

公开(公告)号：US09318570B2

公开(公告)日：2016-04-19

申请号：US14472571

申请日：2014-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Il Han ,  Jong-Un Kim ,  Jun-Soo Kim

IPC: H01L27/00 ,  H01L29/00 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66 ,  H01L27/108

CPC classification number: H01L29/4236 ,  H01L27/10814 ,  H01L27/10876 ,  H01L27/10888 ,  H01L29/66621 ,  H01L29/78 ,  H01L29/7827

Abstract: Provided is a semiconductor device, including a substrate including a device isolation layer and an active region isolated by the device isolation layer; a trench in the active region; a gate electrode filling at least a portion of the trench; a recess in the substrate at one side of the gate electrode, the recess overlapping a portion of the device isolation layer and the active region; and a lower contact plug filling the recess.

Abstract translation: 提供一种半导体器件，包括：衬底，其包括器件隔离层和由器件隔离层隔离的有源区; 活跃区域的沟槽; 填充所述沟槽的至少一部分的栅电极; 在栅电极的一侧的衬底中的凹部，凹部与器件隔离层的一部分和有源区重叠; 以及填充凹部的下接触塞。

公开(公告)号：US20150194438A1

公开(公告)日：2015-07-09

申请号：US14450854

申请日：2014-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Soo Kim ,  Dong-Soo Woo ,  Se-myeong Jang

IPC: H01L27/115

CPC classification number: H01L27/10891 ,  H01L27/10876

Abstract: A semiconductor device can include a substrate including a plurality of active regions having a long axis in a first direction and a short axis in a second direction, the plurality of active regions being repeatedly and separately positioned along the first and second directions, an isolation film defining the plurality of active regions, a plurality of word lines extending across the plurality of active regions and the isolation film, and a positive fixed charge containing layer covering at least a portion of the plurality of word lines, respectively.

Abstract translation: 半导体器件可以包括：衬底，其包括在第一方向上具有长轴和在第二方向上具有短轴的多个有源区，所述多个有源区沿着所述第一和第二方向重复且分开地定位;隔离膜 限定多个有源区域，跨越多个有源区域和隔离膜延伸的多个字线，以及分别覆盖多个字线的至少一部分的正固定电荷含有层。