公开(公告)号：US10241510B2

公开(公告)日：2019-03-26

申请号：US15214107

申请日：2016-07-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-jin Jung ,  Myung-sik Kim ,  Je-woong Ryu ,  Seung-beom Han ,  Chang-soo Park ,  Aron Baik ,  Jung-gap Kuk ,  Jung-hoon Park ,  Jin-woo Yoo ,  Mid-eum Choi

IPC: G05D1/00 ,  G05D1/02 ,  B60W40/072 ,  B60W50/00 ,  B60W50/08 ,  B60W50/12 ,  B60W30/10

Abstract: Methods and apparatuses are provided for controlling a vehicle. The vehicle is controlled to operate in an autonomous driving mode in which the vehicle is driven without a manipulation by an operator of the vehicle. A request to switch to a manual driving mode, in which the vehicle is driven with the manipulation by the operator, is received. A range of the manipulation regarding a function of the vehicle is determined according to a driving situation of the vehicle in response to the request. The vehicle is controlled to operate in the manual driving mode in which the manipulation by the operator is limited according to the range of the manipulation.

公开(公告)号：US11157107B2

公开(公告)日：2021-10-26

申请号：US16751900

申请日：2020-01-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang-yong Lee ,  Woo-jin Jung ,  Beom-soo Cho ,  Yong-gook Park

IPC: G06F3/041 ,  G06F3/0488

Abstract: An apparatus performs a method for providing a touch interface. The method includes receiving a touch input from a touch detection unit, detecting touch characteristics according to the touch input, and generating events different from each other according to the detected touch characteristics.

公开(公告)号：US10043879B1

公开(公告)日：2018-08-07

申请号：US15660432

申请日：2017-07-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoon-jae Kim ,  Ho-young Kim ,  Dong-kwon Kim ,  Jin-hyuk Yoo ,  Woo-jin Jung

IPC: H01L21/70 ,  H01L29/423 ,  H01L29/78 ,  H01L29/51 ,  H01L29/66

Abstract: A semiconductor device includes a fin active region protruding from a substrate and extending in a first direction, a gate electrode covering an upper surface and sidewalls of the fin active region and extending in a second direction crossing the first direction, a gate spacer structure on opposite sidewalls of the gate electrode, an insulating capping layer on the gate electrode and extending in the second direction, an insulating liner on opposite sidewalls of the gate electrode and on an upper surface of the gate spacer structure, and a self-aligned contact at a side of the gate electrode. The insulating liner may have a second thickness greater than a first thickness of the gate spacer structure. A sidewall of the self-aligned contact may be in contact with the gate spacer structure and the insulating liner.