公开(公告)号：US20220302316A1

公开(公告)日：2022-09-22

申请号：US17836416

申请日：2022-06-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woocheol SHIN ,  Sunggi HUR ,  Sangwon BAEK ,  Junghan LEE

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L21/02

Abstract: A semiconductor device includes channels, a gate structure, and a source/drain layer. The channels are stacked in a vertical direction. Each channel extends in a first direction. The gate structure extends in a second direction. The gate structure covers the channels. The source/drain layer is connected to each of opposite sidewalls in the first direction of the channels on the substrate, and includes a doped semiconductor material. The source/drain layer includes first and second epitaxial layers having first and second impurity concentrations, respectively. The first epitaxial layer covers a lower surface and opposite sidewalls in the first direction of the second epitaxial layer. A portion of each of opposite sidewalls in the first direction of the gate structure protrudes in the first direction from opposite sidewalls in the first direction of the channels to partially penetrate through the first epitaxial layer but not to contact the second epitaxial layer.

公开(公告)号：US20210257499A1

公开(公告)日：2021-08-19

申请号：US17034421

申请日：2020-09-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woocheol SHIN ,  Sunggi HUR ,  Sangwon BAEK ,  Junghan LEE

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L21/02 ,  H01L29/66

Abstract: A semiconductor device includes channels, a gate structure, and a source/drain layer. The channels are stacked in a vertical direction. Each channel extends in a first direction. The gate structure extends in a second direction. The gate structure covers the channels. The source/drain layer is connected to each of opposite sidewalls in the first direction of the channels on the substrate, and includes a doped semiconductor material. The source/drain layer includes first and second epitaxial layers having first and second impurity concentrations, respectively. The first epitaxial layer covers a lower surface and opposite sidewalls in the first direction of the second epitaxial layer. A portion of each of opposite sidewalls in the first direction of the gate structure protrudes in the first direction from opposite sidewalls in the first direction of the channels to partially penetrate through the first epitaxial layer but not to contact the second epitaxial layer.

公开(公告)号：US20210066455A1

公开(公告)日：2021-03-04

申请号：US16821491

申请日：2020-03-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghan LEE ,  Changhee KIM ,  Kihwan KIM ,  Suhyueon PARK ,  Jaehong CHOI

IPC: H01L29/08 ,  H01L27/088 ,  H01L29/167 ,  H01L21/8234

Abstract: A semiconductor device including an active region protruding from an upper surface of a substrate and extending in a first horizontal direction, at least two gate electrodes extending in a second horizontal direction and crossing the active region, the second horizontal direction crossing the first horizontal direction, a source/drain region in the active region between the gate electrodes may be provided. The source/drain region includes a recess region, an outer doped layer on an inner wall of the recess region, an intermediate doped layer on the outer doped layer, and an inner doped layer on the intermediate doped layer and filling the recess region. One of the outer doped layer or the intermediate doped layer includes antimony, and the inner doped layer includes phosphorous.

公开(公告)号：US20240213371A1

公开(公告)日：2024-06-27

申请号：US18597440

申请日：2024-03-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woocheol SHIN ,  Sunggi HUR ,  Sangwon BAEK ,  Junghan LEE

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/78618 ,  H01L21/02236 ,  H01L21/02532 ,  H01L21/02603 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66742 ,  H01L29/78696

Abstract: A semiconductor device includes channels, a gate structure, and a source/drain layer. The channels are stacked in a vertical direction. Each channel extends in a first direction. The gate structure extends in a second direction. The gate structure covers the channels. The source/drain layer is connected to each of opposite sidewalls in the first direction of the channels on the substrate, and includes a doped semiconductor material. The source/drain layer includes first and second epitaxial layers having first and second impurity concentrations, respectively. The first epitaxial layer covers a lower surface and opposite sidewalls in the first direction of the second epitaxial layer. A portion of each of opposite sidewalls in the first direction of the gate structure protrudes in the first direction from opposite sidewalls in the first direction of the channels to partially penetrate through the first epitaxial layer but not to contact the second epitaxial layer.

公开(公告)号：US20230255017A1

公开(公告)日：2023-08-10

申请号：US18103596

申请日：2023-01-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Teawon KIM ,  Jiwon YUN ,  Yurim KIM ,  Junghan LEE ,  Yongsuk TAK

IPC: H10B12/00

CPC classification number: H10B12/315 ,  H10B12/482 ,  H10B12/05 ,  H10B12/0335

Abstract: A semiconductor apparatus includes a bit line extending in a first horizontal direction on a substrate; a channel layer on the bit line, the channel layer extending in a vertical direction, including a first oxide semiconductor material that includes indium, and having a first side wall and a second side wall; a word line on the first side wall of the channel layer; a contact forming region on a top surface and an upper portion of the second side wall of the channel layer, the contact forming region including a second oxide semiconductor material that includes indium and having a resistivity lower than a resistivity of the channel layer; a contact layer on the contact forming region; and a capacitor structure on a top surface of the contact layer.

公开(公告)号：US20220093739A1

公开(公告)日：2022-03-24

申请号：US17541878

申请日：2021-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghan LEE ,  Changhee KIM ,  Kihwan KIM ,  Suhyueon PARK ,  Jaehong CHOI

IPC: H01L29/08 ,  H01L27/088 ,  H01L29/167 ,  H01L21/8234

Abstract: A semiconductor device including an active region protruding from an upper surface of a substrate and extending in a first horizontal direction, at least two gate electrodes extending in a second horizontal direction and crossing the active region, the second horizontal direction crossing the first horizontal direction, a source/drain region in the active region between the gate electrodes may be provided. The source/drain region includes a recess region, an outer doped layer on an inner wall of the recess region, an intermediate doped layer on the outer doped layer, and an inner doped layer on the intermediate doped layer and filling the recess region. One of the outer doped layer or the intermediate doped layer includes antimony, and the inner doped layer includes phosphorous.