公开(公告)号：US12284821B2

公开(公告)日：2025-04-22

申请号：US17849797

申请日：2022-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghwan Chun ,  Hongsik Shin ,  Koungmin Ryu ,  Bongkwan Baek ,  Jongmin Baek

IPC: H10D30/67 ,  H01L21/02 ,  H10D30/01 ,  H10D30/43 ,  H10D62/10 ,  H10D64/01

Abstract: A semiconductor device includes an active region extending on a substrate in a first direction, a gate structure including a gate electrode extending on the substrate in a second direction and traversing the active region, a spacer structure extending on opposing sidewalls of the gate electrode in the second direction, and a capping layer on the gate electrode and the spacer structure, a source/drain region on the active region adjacent the gate structure, and a first contact plug connected to the source/drain region and a second contact plug connected to the gate structure. The capping layer includes a lower capping layer and an upper capping layer on the lower capping layer, and the second contact plug penetrates through the capping layer, is connected to the gate electrode and includes a convex sidewall penetrating into the upper capping layer.

公开(公告)号：US20240339377A1

公开(公告)日：2024-10-10

申请号：US18463550

申请日：2023-09-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghwan Chun ,  Minjae Kang ,  Koungmin Ryu ,  Jongmin Baek ,  Deokyoung Jung

IPC: H01L23/48 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/481 ,  H01L21/76898 ,  H01L23/5226 ,  H01L23/53295

Abstract: A semiconductor device includes an active region extending on a substrate in a first direction; a device isolation layer on the active region; a source/drain region on the active region; an interlayer insulating layer on the source/drain region; a stopper layer on the interlayer insulating layer; a contact structure passing through the interlayer insulating layer and the stopper layer and electrically connected to the source/drain region; and a conductive through-structure passing through the device isolation layer and the interlayer insulating layer from a lower surface of the substrate, and extending in a third direction, to contact a lower surface of the contact structure and the stopper layer, wherein the stopper layer is in contact with a portion of a side surface of the contact structure, and a lower surface of the stopper layer is lower than an upper surface of the contact structure relative to the substrate.

公开(公告)号：US12237385B2

公开(公告)日：2025-02-25

申请号：US17712319

申请日：2022-04-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bongkwan Baek ,  Junghwan Chun ,  Jongmin Baek ,  Koungmin Ryu

IPC: H01L21/02 ,  H01L21/768 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device includes a gate structure disposed on a substrate; a source and drain layer disposed on the substrate adjacent the gate structure; a first contact plug disposed on the source and drain layer, an insulation pattern structure disposed on the first contact plug, the insulation pattern structure including insulation patterns having different carbon concentrations; and a second contact plug disposed on the gate structure.