公开(公告)号：US20190333754A1

公开(公告)日：2019-10-31

申请号：US16217339

申请日：2018-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunyoung Lee ,  Minjae Kang ,  Se-Yeon Kim ,  Teawon Kim ,  Yong-Suk Tak ,  Sunjung Kim

IPC: H01L21/02 ,  H01L21/28 ,  H01L29/49 ,  H01L29/66 ,  H01L29/165 ,  C23C16/36 ,  C23C16/455

Abstract: A method of forming a low-k layer includes forming a layer by providing a silicon source, a carbon source, an oxygen source, and a nitrogen source onto a substrate. The forming of the layer includes a plurality of main cycles, and each of the main cycles includes providing the silicon source, providing the carbon source, providing the oxygen source, and providing the nitrogen source, each of which is performed at least one time. Each of the main cycles includes sub-cycles in which the providing of the carbon source and the providing of the oxygen source are alternately performed.

公开(公告)号：US20240339377A1

公开(公告)日：2024-10-10

申请号：US18463550

申请日：2023-09-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghwan Chun ,  Minjae Kang ,  Koungmin Ryu ,  Jongmin Baek ,  Deokyoung Jung

IPC: H01L23/48 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/481 ,  H01L21/76898 ,  H01L23/5226 ,  H01L23/53295

Abstract: A semiconductor device includes an active region extending on a substrate in a first direction; a device isolation layer on the active region; a source/drain region on the active region; an interlayer insulating layer on the source/drain region; a stopper layer on the interlayer insulating layer; a contact structure passing through the interlayer insulating layer and the stopper layer and electrically connected to the source/drain region; and a conductive through-structure passing through the device isolation layer and the interlayer insulating layer from a lower surface of the substrate, and extending in a third direction, to contact a lower surface of the contact structure and the stopper layer, wherein the stopper layer is in contact with a portion of a side surface of the contact structure, and a lower surface of the stopper layer is lower than an upper surface of the contact structure relative to the substrate.

公开(公告)号：US20240162323A1

公开(公告)日：2024-05-16

申请号：US18489220

申请日：2023-10-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghoo Shin ,  Sangcheol Na ,  Minjae Kang ,  Yongjin Kwon ,  Soeun Kim ,  Jongmin Baek

IPC: H01L29/423 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/42392 ,  H01L21/823475 ,  H01L27/088 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/78696

Abstract: The integrated circuit device includes a substrate, a first fin extending in a first horizontal direction on the substrate, a second fin and a third fin spaced apart from each other in the first horizontal direction and extending in the first horizontal direction, a second source/drain area on the second fin and the third fin, a back side contact between the second fin and the third fin and electrically connected to the second source/drain area, and a back side conductive layer extending in the first horizontal direction and electrically connected to the back side contact. The back side contact includes a first portion protruding from the substrate and a second portion that is coplanar, in a vertical direction, with the substrate. A width of the second portion in the second horizontal direction is greater than a width of the first portion in the second horizontal direction.

公开(公告)号：US10861695B2

公开(公告)日：2020-12-08

申请号：US16217339

申请日：2018-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunyoung Lee ,  Minjae Kang ,  Se-Yeon Kim ,  Teawon Kim ,  Yong-Suk Tak ,  Sunjung Kim

IPC: H01L21/00 ,  H01L21/02 ,  C23C16/36 ,  C23C16/455 ,  H01L21/28 ,  H01L29/165 ,  H01L29/49 ,  H01L29/66

Abstract: A method of forming a low-k layer includes forming a layer by providing a silicon source, a carbon source, an oxygen source, and a nitrogen source onto a substrate. The forming of the layer includes a plurality of main cycles, and each of the main cycles includes providing the silicon source, providing the carbon source, providing the oxygen source, and providing the nitrogen source, each of which is performed at least one time. Each of the main cycles includes sub-cycles in which the providing of the carbon source and the providing of the oxygen source are alternately performed.