公开(公告)号：US20180174822A1

公开(公告)日：2018-06-21

申请号：US15656305

申请日：2017-07-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngjo TAK ,  Sammook KANG ,  Mihyun KIM ,  Junyoun KIM

IPC: H01L21/02

CPC classification number: H01L21/0254 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02664

Abstract: A method of fabricating a nitride semiconductor substrate including forming a buffer layer on a surface of a growth substrate, growing a first nitride semiconductor layer on the buffer layer, growing a second nitride semiconductor layer on the first nitride semiconductor layer, and removing the growth substrate may be provided. The forming a buffer layer may deform the surface of the growth substrate to have a convex shape. The forming a buffer layer and the growing a first nitride semiconductor layer may be performed within a first process chamber. The growing a second nitride semiconductor layer and the removing the growth substrate may be performed within a second process chamber.