公开(公告)号：US20240136354A1

公开(公告)日：2024-04-25

申请号：US18171754

申请日：2023-02-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： KEUMSEOK PARK ,  SOOYOUNG PARK ,  JAEJIK BAEK ,  KANG-ILL SEO

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/08 ,  H01L29/786

CPC classification number: H01L27/0886 ,  H01L21/823412 ,  H01L21/823418 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/78696

Abstract: Integrated circuit devices and methods of forming the same are provided. An integrated circuit device may include a substrate and a transistor stack on the substrate, the transistor stack including a first transistor and a second transistor on the first transistor. The first transistor may be between the substrate and the second transistor and the first transistor may include first and second source/drain regions, a first channel region between the first and second source/drain regions, and a first gate structure on the first channel region. A lower surface of the first source/drain region may be higher than a lower surface of the first gate structure relative to the substrate.

公开(公告)号：US20250169186A1

公开(公告)日：2025-05-22

申请号：US18642910

申请日：2024-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： KEUMSEOK PARK ,  SEUNGCHAN YUN ,  KANG-ILL SEO

IPC: H01L27/06 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/66 ,  H01L29/775

Abstract: Transistor devices are provided. A transistor device includes a substrate and a transistor stack on the substrate. The transistor stack includes a lower transistor and an upper transistor that is on top of the lower transistor. Moreover, the transistor device includes a semiconductor spacer between the upper transistor and the lower transistor. Related methods of forming transistor devices are also provided.