公开(公告)号：US20180051375A1

公开(公告)日：2018-02-22

申请号：US15469212

申请日：2017-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minjong KIM ,  Seonggil PARK ,  Jaebeom PARK ,  Jung-soo YOON ,  Keeyoung JUN ,  Choongrae CHO ,  Jongwon HONG

IPC: C23C16/50 ,  C23C16/04 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  H01J37/32

CPC classification number: C23C16/50 ,  C23C16/04 ,  C23C16/45565 ,  C23C16/4586 ,  C23C16/52 ,  H01J37/32366 ,  H01J37/3244 ,  H01J37/3255 ,  H01J37/32715 ,  H01J37/32724

Abstract: Disclosed is a substrate processing apparatus. The substrate processing apparatus comprises a process chamber providing an inner space where a substrate is treated, a support unit disposed in the inner space and supporting the substrate, and a gas supply unit providing the inner space with a process gas required for generating plasma. The support unit comprises a base having a top surface on which the substrate is placed, a heater disposed in the base, and a coating layer formed on the top surface of the base.