公开(公告)号：US20230068365A1

公开(公告)日：2023-03-02

申请号：US17709580

申请日：2022-03-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hong KIM ,  Suck Hyun PARK ,  Byung Woo NAM ,  Ki Hyun CHOI

IPC: G11B33/14 ,  G06F1/329 ,  G06F1/20

Abstract: A storage package, a storage device, and a method for operating a storage device are provided. A storage package includes a fan, a display device, and a storage device which includes a non-volatile memory, and is configured to output a control signal based on a temperature of the storage device or an indication of whether a memory operation is scheduled to be executed on the non-volatile memory. The storage device includes a control circuit configured to control an operation the fan and/or the display device based on the control signal, and is configured to control the display device to output light with different colors according to first to third temperature ranges of the temperature of the storage device. The control circuit is configured to operate the fan to cool the storage device responsive the storage device exceeding a preset reference temperature, or responsive to scheduled memory operations.

公开(公告)号：US20190326187A1

公开(公告)日：2019-10-24

申请号：US16191881

申请日：2018-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun Chul SAGONG ,  June Kyun PARK ,  Hyun Jin KIM ,  Ki Hyun CHOI ,  Sang Woo PAE

IPC: H01L21/66 ,  H01L27/11 ,  H01L27/088

Abstract: A semiconductor device including a test structure includes a semiconductor substrate and a plurality of test structures on the semiconductor substrate. The test structures include respective lower active regions extending from the semiconductor substrate in a vertical direction and having different widths, and upper active regions extending from respective lower active regions in the vertical direction. Each of the lower active regions includes first regions and second regions. The first regions overlap the upper active regions and are between the second regions, and the second regions include outer regions and inner regions between the outer regions. The outer regions, located in the lower active regions having different widths, have different widths.

公开(公告)号：US20210055988A1

公开(公告)日：2021-02-25

申请号：US16857358

申请日：2020-04-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bo Mi KIM ,  Dong Gun KIM ,  Soo Hyun KIM ,  Ki Hyun CHOI ,  Pil Chang SON

IPC: G06F11/10

Abstract: An operating method of a memory controller to update metadata using journaling data in a short time during a booting operation, and to maintain reliability of the updated metadata. The operating method of a memory controller includes loading metadata into sub-regions of a buffer memory, updating the metadata using journaling data in a state that error correction code (ECC) functions of memory controller for the sub-regions are disabled, generating a first parity data of data stored in the first sub-region, and enabling the ECC function of the first sub-region, after the first parity data is generated.

公开(公告)号：US20200035675A1

公开(公告)日：2020-01-30

申请号：US16395841

申请日：2019-04-26

Applicant: SAMSUNG ELECTRONICS CO, LTD

Inventor： HYUN CHUL SAGONG ,  Sang Woo PAE ,  Ki Hyun CHOI ,  June Kyun PARK ,  Uk Jin JUNG

IPC: H01L27/088 ,  H01L21/28 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/06 ,  H01L29/78

Abstract: A semiconductor device is provided. The Semiconductor device includes a substrate, a first fin type pattern and a second fin type pattern which protrude from an upper surface of the substrate and are spaced apart from each other, a first semiconductor pattern on the first fin type pattern, a second semiconductor pattern on the second tin type pattern and a blocking pattern between the first semiconductor pattern and the second semiconductor pattern, a part of the first semiconductor pattern being inserted in the blocking pattern.