公开(公告)号：US20200286985A1

公开(公告)日：2020-09-10

申请号：US16590565

申请日：2019-10-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Han Jin Lim ,  Ki Nam Kim ,  Hyung Suk Jung ,  Kyoo Ho Jung ,  Ki Hyun Hwang

IPC: H01L49/02 ,  H01L21/02 ,  H01L21/28 ,  H01L27/11507

Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.

公开(公告)号：US12125872B2

公开(公告)日：2024-10-22

申请号：US18347850

申请日：2023-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Han Jin Lim ,  Ki Nam Kim ,  Hyung Suk Jung ,  Kyoo Ho Jung ,  Ki Hyun Hwang

IPC: H10B53/30 ,  H01L21/02 ,  H01L21/28 ,  H01L49/02 ,  H10B12/00

CPC classification number: H01L28/56 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/02197 ,  H01L21/28247 ,  H10B53/30 ,  H10B12/00

Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.

公开(公告)号：US11322578B2

公开(公告)日：2022-05-03

申请号：US16590565

申请日：2019-10-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Han Jin Lim ,  Ki Nam Kim ,  Hyung Suk Jung ,  Kyoo Ho Jung ,  Ki Hyun Hwang

IPC: H01L49/02 ,  H01L21/02 ,  H01L21/28 ,  H01L27/11507 ,  H01L27/108

Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.

公开(公告)号：US11728372B2

公开(公告)日：2023-08-15

申请号：US17714259

申请日：2022-04-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Han Jin Lim ,  Ki Nam Kim ,  Hyung Suk Jung ,  Kyoo Ho Jung ,  Ki Hyun Hwang

IPC: H01L49/02 ,  H01L21/02 ,  H01L21/28 ,  H10B53/30 ,  H10B12/00

CPC classification number: H01L28/56 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/02197 ,  H01L21/28247 ,  H10B53/30 ,  H10B12/00

Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.