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公开(公告)号:US20200286985A1
公开(公告)日:2020-09-10
申请号:US16590565
申请日:2019-10-02
Applicant: Samsung Electronics Co., Ltd.
Inventor: Han Jin Lim , Ki Nam Kim , Hyung Suk Jung , Kyoo Ho Jung , Ki Hyun Hwang
IPC: H01L49/02 , H01L21/02 , H01L21/28 , H01L27/11507
Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.
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公开(公告)号:US12125872B2
公开(公告)日:2024-10-22
申请号:US18347850
申请日:2023-07-06
Applicant: Samsung Electronics Co., Ltd.
Inventor: Han Jin Lim , Ki Nam Kim , Hyung Suk Jung , Kyoo Ho Jung , Ki Hyun Hwang
CPC classification number: H01L28/56 , H01L21/02181 , H01L21/02189 , H01L21/02192 , H01L21/02197 , H01L21/28247 , H10B53/30 , H10B12/00
Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.
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公开(公告)号:US11322578B2
公开(公告)日:2022-05-03
申请号:US16590565
申请日:2019-10-02
Applicant: Samsung Electronics Co., Ltd.
Inventor: Han Jin Lim , Ki Nam Kim , Hyung Suk Jung , Kyoo Ho Jung , Ki Hyun Hwang
IPC: H01L49/02 , H01L21/02 , H01L21/28 , H01L27/11507 , H01L27/108
Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.
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公开(公告)号:US11728372B2
公开(公告)日:2023-08-15
申请号:US17714259
申请日:2022-04-06
Applicant: Samsung Electronics Co., Ltd.
Inventor: Han Jin Lim , Ki Nam Kim , Hyung Suk Jung , Kyoo Ho Jung , Ki Hyun Hwang
CPC classification number: H01L28/56 , H01L21/02181 , H01L21/02189 , H01L21/02192 , H01L21/02197 , H01L21/28247 , H10B53/30 , H10B12/00
Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.
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