公开(公告)号：US10249817B2

公开(公告)日：2019-04-02

申请号：US15678098

申请日：2017-08-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki-woong Kim ,  Kee-won Kim ,  Se-chung Oh ,  Yong-sung Park ,  Ju-hyun Kim

IPC: H01L29/82 ,  H01L43/10 ,  H01L43/08 ,  H01L27/22

Abstract: A magnetic device includes a free layer; a pinned layer; a tunnel barrier disposed between the free layer and the pinned layer; a polarization enhancement layer disposed between the tunnel barrier and the pinned layer; and a blocking layer disposed between the polarization enhancement layer and the pinned layer, wherein the blocking layer includes a first diffusion trap layer and a second diffusion trap layer disposed on the first diffusion trap layer.