公开(公告)号：US08836057B2

公开(公告)日：2014-09-16

申请号：US13665824

申请日：2012-10-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-chul Lee ,  Ung-hwan Pi ,  Kwang-seok Kim ,  Kee-won Kim ,  Young-man Jang

IPC: H01L29/82

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228

Abstract: Magnetoresistive elements, and memory devices including the same, include a pinned layer having a fixed magnetization direction, a free layer corresponding to the pinned layer, and a protruding element protruding from the free layer and having a changeable magnetization direction. The free layer has a changeable magnetization direction. The protruding element is shaped in the form of a tube. The protruding element includes a first protruding portion and a second protruding portion protruding from ends of the free layer facing in different directions.

Abstract translation: 磁阻元件及包括其的存储器件包括具有固定磁化方向的固定层，对应于被钉扎层的自由层以及从自由层突出并具有可变磁化方向的突出元件。 自由层具有可变化的磁化方向。 突出元件以管的形式成形。 突出元件包括从自由层的朝向不同方向的端部突出的第一突出部分和第二突出部分。

公开(公告)号：US08729647B2

公开(公告)日：2014-05-20

申请号：US13681819

申请日：2012-11-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-chul Lee ,  Kwang-seok Kim ,  Kee-won Kim ,  Young-man Jang ,  Ung-hwan Pi

IPC: H01L29/82 ,  G11C11/02

CPC classification number: H01L29/82 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08

Abstract: A thermally stable Magnetic Tunnel Junction (MTJ) cell, and a memory device including the same, include a pinned layer having a pinned magnetization direction, a separation layer on the pinned layer, and a free layer on the separation layer and having a variable magnetization direction. The pinned layer and the free layer include a magnetic material having Perpendicular Magnetic Anisotropy (PMA). The free layer may include a central part and a marginal part on a periphery of the central part. The free layer is shaped in the form of a protrusion in which the central part is thicker than the marginal part.

Abstract translation: 一种热稳定磁隧道结（MTJ）单元及其包括该存储器件的存储器件包括具有钉扎磁化方向的钉扎层，钉扎层上的分离层和分离层上的自由层，并且具有可变磁化强度 方向。 钉扎层和自由层包括具有垂直磁各向异性（PMA）的磁性材料。 自由层可以包括在中心部分的周边上的中心部分和边缘部分。 自由层成形为突起的形式，其中中心部分比边缘部分厚。

公开(公告)号：US10249817B2

公开(公告)日：2019-04-02

申请号：US15678098

申请日：2017-08-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki-woong Kim ,  Kee-won Kim ,  Se-chung Oh ,  Yong-sung Park ,  Ju-hyun Kim

IPC: H01L29/82 ,  H01L43/10 ,  H01L43/08 ,  H01L27/22

Abstract: A magnetic device includes a free layer; a pinned layer; a tunnel barrier disposed between the free layer and the pinned layer; a polarization enhancement layer disposed between the tunnel barrier and the pinned layer; and a blocking layer disposed between the polarization enhancement layer and the pinned layer, wherein the blocking layer includes a first diffusion trap layer and a second diffusion trap layer disposed on the first diffusion trap layer.

公开(公告)号：US09570674B2

公开(公告)日：2017-02-14

申请号：US14693852

申请日：2015-04-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kee-won Kim ,  Sang-hwan Park ,  Sang-yong Kim

IPC: H01L43/10 ,  H01L43/02 ,  H01L27/22 ,  H01L43/08

CPC classification number: H01L43/10 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetic device includes a free layer including a first magnetization layer; a pinned layer including a second magnetization layer; and a tunnel barrier layer provided between the free layer and the pinned layer. At least one selected from the free layer and the pinned layer includes a synthetic antiferromagnetic (SAF) structure formed of a first ferromagnetic layer, a second ferromagnetic layer, and a ruthenium-rhodium (Ru—Rh) alloy layer provided between the first and second ferromagnetic layers.

Abstract translation: 磁性装置包括：包含第一磁化层的自由层; 包括第二磁化层的被钉扎层; 以及设置在自由层和被钉扎层之间的隧道势垒层。 从自由层和钉扎层中选择的至少一种包括由第一铁磁层，第二铁磁层和设置在第一和第二铁素体之间的钌 - 铑（Ru-Rh）合金层形成的合成反铁磁（SAF）结构 铁磁层。

公开(公告)号：US09230623B2

公开(公告)日：2016-01-05

申请号：US13923849

申请日：2013-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang-seok Kim ,  Ung-hwan Pi ,  Kee-won Kim ,  Sung-chul Lee ,  Young-man Jang

IPC: G11C11/00 ,  G11C11/16 ,  H01L27/22 ,  H01L43/08

CPC classification number: G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H01L27/228 ,  H01L43/08

Abstract: Magnetic memory devices, and methods of operating the same, include a magnetoresistive element including a free layer, a pinned layer, and a separation layer between the free layer and the pinned layer. The devices, and methods, further include a first conductive line connected to the free layer and configured to apply a Rashba field to, or induce the Rashba field in, the free layer, and a second conductive line spaced apart from the free layer and configured to apply an external magnetic field to the free layer. A magnetization direction of the free layer is switchable by application of the Rashba field and the external magnetic field to the free layer.

Abstract translation: 磁存储器件及其操作方法包括磁阻元件，其包括自由层，被钉扎层和在自由层和被钉扎层之间的分离层。 器件和方法还包括连接到自由层并被配置为将Rashba场施加到自由层中的Rashba场或者引入自由层中的Rashba场的第一导线以及与自由层间隔开并配置的第二导线 以将外部磁场施加到自由层。 自由层的磁化方向可以通过将Rashba场和外部磁场施加到自由层来切换。