公开(公告)号：US20140192588A1

公开(公告)日：2014-07-10

申请号：US14146748

申请日：2014-01-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungyeon Lee ,  Yeongtaek Lee ,  Kiwon Lim ,  Wonryul Chung

IPC: G11C13/00

CPC classification number: G11C13/004 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/0054 ,  G11C2213/71 ,  G11C2213/72

Abstract: A nonvolatile memory device is provided which includes a main area including main cells connected to word lines and main bit lines; a reference area including reference cells connected to the word lines and reference bit lines and programmed using the same write condition as that of the main area; a reference sense amplifier circuit configured to read data written at the reference area through the reference bit lines at a read operation; and control logic configured to control the reference sense amplifier circuit such that data written at the reference area is shifted with a weight scheme and then read, the data written at the reference area being used as a read reference value of the main area at a read operation.

Abstract translation: 提供了一种非易失性存储器件，包括：主区域，包括连接到字线和主位线的主单元; 参考区域，包括连接到字线和参考位线的参考单元，并使用与主区域相同的写入条件进行编程; 参考读出放大器电路，被配置为在读取操作时通过参考位线读取写入参考区域的数据; 以及控制逻辑，被配置为控制参考读出放大器电路，使得写入参考区域的数据以加权方案移位，然后读取，写入参考区域的数据被用作读取时的主区域的读取参考值 操作。