公开(公告)号：US11137978B2

公开(公告)日：2021-10-05

申请号：US15965586

申请日：2018-04-27

Applicant: Samsung Electronics Co., Ltd

Inventor： Kwang Yong Lee ,  Jung Hoe Kim ,  Soo Bin Park ,  Kyoung Gu Woo ,  Seong Min Je

IPC: G06F3/16 ,  G10L15/22 ,  G06F3/0484 ,  G10L15/18 ,  G06F40/30

Abstract: An electronic device includes a processor, and a memory. The memory may store instructions that, cause the processor to display a user interface including items, receive a first user utterance while the user interface is displayed, wherein the first user utterance includes a first request for executing a first task by using at least one item, transmit first data related to the first user utterance to an external server, receive a first response from the external server, wherein the first response includes information on a first sequence of states of the electronic device for executing the first task and further includes numbers and locations of the items in the user interface, and execute the first task including an operation of allowing the application program to select the one or the plurality of items based on the numbers or the locations.

公开(公告)号：US08536045B2

公开(公告)日：2013-09-17

申请号：US13656290

申请日：2012-10-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minill Kim ,  Kwang Yong Lee ,  Jonggi Lee ,  Ji-Seok Hong

IPC: H01L21/44

CPC classification number: B23K1/00 ,  B23K1/0016 ,  B23K1/002 ,  B23K1/008 ,  B23K3/0475 ,  B23K3/087 ,  B23K2101/42 ,  H01L24/75 ,  H01L24/81 ,  H05K3/3494 ,  H05K2203/101 ,  H05K2203/1509

Abstract: A reflow method of a solder ball provided to a treatment object may include providing a coil, applying a current to the coil, and moving the treatment object through an internal space surrounded by the coil.

Abstract translation: 提供给处理物体的焊球的回流方法可以包括提供线圈，向线圈施加电流，以及通过由线圈包围的内部空间移动处理物体。

公开(公告)号：US20250118702A1

公开(公告)日：2025-04-10

申请号：US18647450

申请日：2024-04-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang Yong Lee

IPC: H01L23/00 ,  H01L23/31 ,  H01L25/065

Abstract: A semiconductor package may include a lower structure, and an upper structure on the lower structure. The lower structure may include a first semiconductor substrate, first pads on the first semiconductor substrate, and a first insulating layer enclosing the first pads. The upper structure includes a second semiconductor substrate, second pads on the second semiconductor substrate, and a second insulating layer enclosing the second pads. A side surface of the lower structure and a side surface of the upper structure form a stepwise structure near a bonding surface between the lower structure and the upper structure. The first insulating layer includes a protruding portion that extends to a level higher than a top surface of the first insulating layer and is inserted in the second insulating layer.