摘要:
A reflow method of a solder ball provided to a treatment object may include providing a coil, applying a current to the coil, and moving the treatment object through an internal space surrounded by the coil.
摘要:
Bi-directional camera modules and flip chip bonders including the same are provided. The module includes a circuit board on which an upper sensor and a lower sensor are mounted, an upper lens and a lower lens disposed on the upper sensor and under the lower sensor, respectively, and a housing fixing the upper lens and the lower lens spaced apart from the upper sensor and the lower sensor, respectively. The housing surrounds the circuit board. The housing has a plurality of inlets and an outlet through which air flows, and the housing has an air passage connected from the inlets to the outlet via a space between lower lens and the lower sensor.
摘要:
A die stack structure may include a base die having base contact pads insulated by a base protection patterns and a flat side surface, a die stack bonded to the base die and having a plurality of component dies on the base die such that each of the component dies includes component contact pads insulated by a corresponding component protection pattern, and a residual mold unevenly arranged on a side surface of the die stack such that the component dies are attached to each other by the residual mold.
摘要:
A semiconductor package includes first and second semiconductor elements electrically interconnected by a connection structure. The first and second semiconductor elements are joined by a protection structure that includes an adhesive layer surrounded by a retention layer.
摘要:
Semiconductor packages including a heat spreader and methods of forming the same are provided. The semiconductor packages may include a first semiconductor chip, a second semiconductor chip, and a heat spreader stacked sequentially. The semiconductor packages may also include a thermal interface material (TIM) layer surrounding the second semiconductor chip and directly contacting a sidewall of the second semiconductor chip. An upper surface of the TIM layer may directly contact a lower surface of the heat spreader, and a sidewall of the TIM layer may be substantially coplanar with a sidewall of the heat spreader. In some embodiments, a sidewall of the first semiconductor chip may be substantially coplanar with the sidewall of the TIM layer.
摘要:
A semiconductor package includes a first semiconductor chip, a second semiconductor chip and a sealing member. The first semiconductor chip includes a substrate having a first surface and a second surface opposite to the first surface and having an opening that extends in a predetermined depth from the second surface, and a plurality of through electrodes extending in a thickness direction from the first surface, end portions of the through electrodes being exposed through a bottom surface of the opening. The second semiconductor chip is received in the opening and mounted on the bottom surface of the opening. The sealing member covers the second semiconductor chip in the opening.
摘要:
Semiconductor packages including a heat spreader and methods of forming the same are provided. The semiconductor packages may include a first semiconductor chip, a second semiconductor chip, and a heat spreader stacked sequentially. The semiconductor packages may also include a thermal interface material (TIM) layer surrounding the second semiconductor chip and directly contacting a sidewall of the second semiconductor chip. An upper surface of the TIM layer may directly contact a lower surface of the heat spreader, and a sidewall of the TIM layer may be substantially coplanar with a sidewall of the heat spreader. In some embodiments, a sidewall of the first semiconductor chip may be substantially coplanar with the sidewall of the TIM layer.
摘要:
A semiconductor package includes first and second semiconductor elements electrically interconnected by a connection structure. The first and second semiconductor elements are joined by a protection structure that includes an adhesive layer surrounded by a retention layer.