公开(公告)号：US09343482B2

公开(公告)日：2016-05-17

申请号：US14286481

申请日：2014-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoung-seok Son ,  Kwang-hee Lee ,  Jang-yeon Kwon ,  Ji-sim Jung

IPC: H01L27/12 ,  G09G3/36 ,  G02F1/1362

CPC classification number: H01L27/124 ,  G02F1/13624 ,  G09G3/3659 ,  G09G2300/0426 ,  G09G2310/067 ,  G09G2320/043 ,  H01L27/1225

Abstract: Example embodiments are directed to a switching device of an active display device and a method of driving the switching device, such that electrical reliability of the active display device is improved. The switching device of the active display device includes a plurality of thin film transistors (TFTs) that are connected in series. Except for a refresh time duration during which the plurality of TFTs of the switching device are simultaneously turned ON, a positive voltage is applied to at least one of the plurality of TFTs of the switching device so that a reliability of the switching device may be improved.

Abstract translation: 示例性实施例涉及有源显示装置的开关装置和驱动开关装置的方法，使得主动显示装置的电可靠性得到改善。 有源显示装置的开关装置包括串联连接的多个薄膜晶体管（TFT）。 除了开关装置的多个TFT同时导通的刷新持续时间之外，对开关装置的多个TFT中的至少一个施加正电压，从而可以提高开关装置的可靠性 。

公开(公告)号：US09899453B2

公开(公告)日：2018-02-20

申请号：US15012604

申请日：2016-02-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-bae Park ,  Kyu-sik Kim ,  Yong-wan Jin ,  Woong Choi ,  Kwang-hee Lee ,  Do-hwan Kim

IPC: H01L27/146 ,  H01L27/30 ,  H01L27/12 ,  H01L23/58 ,  H01L33/08

CPC classification number: H01L27/307 ,  H01L23/585 ,  H01L27/1214 ,  H01L27/14609 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14647 ,  H01L27/14667 ,  H01L27/14685 ,  H01L27/14687 ,  H01L33/08 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a pixel of a multi-stacked complementary metal-oxide semiconductor (CMOS) image sensor and a method of manufacturing the image sensor including a light-receiving unit that may include first through third photodiode layers that are sequentially stacked, an integrated circuit (IC) that is formed below the light-receiving unit, electrode layers that are formed on and below each of the first through third photodiode layers, and a contact plug that connects the electrode layer formed below each of the first through third photodiode layers with a transistor of the IC.

公开(公告)号：US09455302B2

公开(公告)日：2016-09-27

申请号：US14584290

申请日：2014-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang-hee Lee ,  Kyung Bae Park ,  Gae Hwang Lee ,  Dong-Seok Leem ,  Yong Wan Jin

IPC: H01L29/49 ,  H01L27/30 ,  H01L51/44

CPC classification number: H01L27/307 ,  H01L51/424 ,  H01L51/442 ,  H01L2251/301 ,  Y02E10/549

Abstract: Example embodiments relate to an image sensor that includes a semiconductor substrate integrated with at least one photo-sensing device, an impurity-doped first light-transmitting electrode present in the semiconductor substrate, an organic photoelectric conversion layer positioned on one side of the semiconductor substrate and absorbing light in a different wavelength from the wavelength sensed by the photo-sensing device, and a second light-transmitting electrode positioned on one side of the organic photoelectric conversion layer, and an electronic device including the same.

Abstract translation: 示例实施例涉及一种图像传感器，其包括与至少一个感光装置集成的半导体衬底，存在于半导体衬底中的掺杂杂质的第一透光电极，位于半导体衬底一侧的有机光电转换层 并且吸收与由感光装置感测的波长不同的波长的光和位于有机光电转换层的一侧的第二透光电极和包括该光电转换层的电子装置。