公开(公告)号：US20230165016A1

公开(公告)日：2023-05-25

申请号：US17934317

申请日：2022-09-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongjae Lee ,  Kyungsoo Kim ,  Jinyoung Park ,  Kyen-Hee Lee

IPC: H01L27/22 ,  H01L43/04 ,  H01L43/06

CPC classification number: H01L27/228 ,  H01L43/04 ,  H01L43/06

Abstract: A semiconductor memory device is disclosed. The semiconductor memory device may include a magnetic tunnel junction pattern, a spin-orbit torque (SOT) pattern in contact with a first portion of the magnetic tunnel junction pattern, a first transistor electrically connected to a second portion of the magnetic tunnel junction pattern and configured to be controlled by a first word line, and a second transistor electrically connected to a first end of the spin-orbit torque pattern and configured to be controlled by a second word line. An effective channel width of the first transistor may be different from an effective channel width of the second transistor.