公开(公告)号：US20180374867A1

公开(公告)日：2018-12-27

申请号：US15860082

申请日：2018-01-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang-Gn YUN ,  Sung-Min HWANG ,  Joon-Sung LIM ,  Kyoil KOO ,  Hoosung CHO ,  Sunyoung KIM ,  Cheol RYOU ,  Jaesun YUN

IPC: H01L27/11582 ,  H01L29/10 ,  H01L29/423

CPC classification number: H01L27/11582 ,  H01L27/11565 ,  H01L27/1157 ,  H01L29/1037 ,  H01L29/4234

Abstract: Disclosed is a three-dimensional semiconductor memory device that includes first to third channel groups arranged in a first direction on a substrate. The first to third channel groups are spaced apart from each other along a second direction on the substrate. Each of the first to third channel groups includes a plurality of vertical channels that extend in a third direction perpendicular to a top surface of the substrate. The first and second channel groups are adjacent to each other in the second direction and spaced apart at a first distance in the second direction. The second and third channel groups are adjacent to each other in the second direction and are spaced apart at a second distance that is less than the first distance.