公开(公告)号：US20230189524A1

公开(公告)日：2023-06-15

申请号：US17884853

申请日：2022-08-10

申请人： Samsung Electronics Co., Ltd.

发明人： Min Gu KANG ,  Sang Don ZOO ,  Joon Sung KIM ,  Junghwan PARK ,  Seorim MOON ,  Seok Cheon BAEK ,  Cheol RYOU ,  Sun Young LEE ,  Cheol-Min LIM

IPC分类号： H01L27/11582 ,  H01L23/535

CPC分类号： H01L27/11582 ,  H01L23/535

摘要： A semiconductor memory device may include a substrate including a first and a second block region, and a stacked structure including insulating films and gate electrodes alternately stacked on the substrate. A vertical channel structure, a word line cut structure, and a block cut structure may penetrate the stacked structure. The word line cut structure may extend in a second direction. The block cut structure may extend in a first direction, connect to the word line cut structure, and define the first and second block regions. The block cut structure may include a first portion connected to the word line cut structure and a second portion connected to the first portion. From a planar viewpoint, the first portion may include at least a part not overlapping the second portion in the first direction and at least a region not overlapping the word line cut structure in the first direction.

公开(公告)号：US20180374867A1

公开(公告)日：2018-12-27

申请号：US15860082

申请日：2018-01-02

申请人： Samsung Electronics Co., Ltd.

发明人： Jang-Gn YUN ,  Sung-Min HWANG ,  Joon-Sung LIM ,  Kyoil KOO ,  Hoosung CHO ,  Sunyoung KIM ,  Cheol RYOU ,  Jaesun YUN

IPC分类号： H01L27/11582 ,  H01L29/10 ,  H01L29/423

CPC分类号： H01L27/11582 ,  H01L27/11565 ,  H01L27/1157 ,  H01L29/1037 ,  H01L29/4234

摘要： Disclosed is a three-dimensional semiconductor memory device that includes first to third channel groups arranged in a first direction on a substrate. The first to third channel groups are spaced apart from each other along a second direction on the substrate. Each of the first to third channel groups includes a plurality of vertical channels that extend in a third direction perpendicular to a top surface of the substrate. The first and second channel groups are adjacent to each other in the second direction and spaced apart at a first distance in the second direction. The second and third channel groups are adjacent to each other in the second direction and are spaced apart at a second distance that is less than the first distance.