公开(公告)号：US20230369332A1

公开(公告)日：2023-11-16

申请号：US18109296

申请日：2023-02-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Soo Kim ,  Sung Min Kim

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/775 ,  H01L21/822 ,  H01L21/8238 ,  H01L29/66

CPC classification number: H01L27/0922 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/42392 ,  H01L29/775 ,  H01L21/8221 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823878 ,  H01L29/66439

Abstract: There is provided a semiconductor device in which a shape of an isolation layer in a structure in which upper nanosheets are stacked on lower nanosheets is controlled to improve reliability of the device. The semiconductor device includes an active pattern on a substrate and extending in a first direction, lower nanosheets spaced apart from each other in a second direction intersecting the first direction and on the active pattern, an isolation layer on the lower nanosheets and spaced apart from the lower nanosheets in the second direction, upper nanosheets spaced apart from each other in the second direction and on the isolation layer, and a gate electrode on the substrate and surrounding each of the lower nanosheets, the isolation layer, and the upper nanosheets, wherein a sidewall of the isolation layer has a curved shape.

公开(公告)号：US20230120551A1

公开(公告)日：2023-04-20

申请号：US17736367

申请日：2022-05-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyen-Hee LEE ,  Kyung Soo Kim ,  Sung Il PARK

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device is provided. The semiconductor device includes: lower nanosheets; upper nanosheets on the lower nanosheets; gate electrodes on the substrate and provided around each of the nanosheets; a first lower source/drain region on a first side of the first and second gate electrodes; a second lower source/drain region on a second side of the first and second gate electrodes; a first upper source/drain region on the first lower source/drain region; and a second upper source/drain region on the second lower source/drain region. A first length of the second lower source/drain region is greater than a second length of the second upper source/drain region.