公开(公告)号：US08975693B2

公开(公告)日：2015-03-10

申请号：US13683505

申请日：2012-11-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eung-Kyu Lee ,  Jae-June Jang ,  Hoon Chang ,  Min-Hwan Kim ,  Sung-Ryoul Bae ,  Dong-Eun Jang

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/08 ,  H01L29/10 ,  H01L29/06

CPC classification number: H01L29/7816 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/66681

Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, a buried layer a second conductivity type different from the first conductivity type on the substrate and an epitaxial layer of the second conductivity type on the buried layer. The device further includes a pocket well of the first conductivity type in the epitaxial layer, a first drift region in the epitaxial layer at least partially overlapping the pocket well, a second drift region in the epitaxial layer and spaced apart from the first drift region, and a body region of the first conductivity type in the pocket well. A gate electrode is disposed on the body region, the pocket well and the first drift region and has an edge overlying the epitaxial region between the first and second drift regions.

Abstract translation: 半导体器件包括第一导电类型的半导体衬底，与衬底上的第一导电类型不同的第二导电类型的掩埋层和在掩埋层上的第二导电类型的外延层。 器件还包括在外延层中的第一导电类型的凹穴，外延层中的至少部分地与凹穴阱重叠的第一漂移区，外延层中的与第一漂移区间隔开的第二漂移区， 以及口袋中的第一导电类型的体区。 栅电极设置在体区，口腔和第一漂移区上，并且具有覆盖第一和第二漂移区之间的外延区的边缘。

公开(公告)号：US20130256794A1

公开(公告)日：2013-10-03

申请号：US13683505

申请日：2012-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eung-Kyu Lee ,  Jae-June Jang ,  Hoon Chang ,  Min-Hwan Kim ,  Sung-Ryoul Bae ,  Dong-Eun Jang

IPC: H01L29/78

CPC classification number: H01L29/7816 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/66681

Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, a buried layer a second conductivity type different from the first conductivity type on the substrate and an epitaxial layer of the second conductivity type on the buried layer. The device further includes a pocket well of the first conductivity type in the epitaxial layer, a first drift region in the epitaxial layer at least partially overlapping the pocket well, a second drift region in the epitaxial layer and spaced apart from the first drift region, and a body region of the first conductivity type in the pocket well. A gate electrode is disposed on the body region, the pocket well and the first drift region and has an edge overlying the epitaxial region between the first and second drift regions.

Abstract translation: 半导体器件包括第一导电类型的半导体衬底，与衬底上的第一导电类型不同的第二导电类型的掩埋层和在掩埋层上的第二导电类型的外延层。 器件还包括在外延层中的第一导电类型的凹穴，外延层中的至少部分地与凹穴阱重叠的第一漂移区，外延层中的与第一漂移区间隔开的第二漂移区， 以及口袋中的第一导电类型的体区。 栅电极设置在体区，口腔和第一漂移区上，并且具有覆盖第一和第二漂移区之间的外延区的边缘。

公开(公告)号：US09093472B2

公开(公告)日：2015-07-28

申请号：US14014675

申请日：2013-08-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min-Hwan Kim

IPC: H01L29/66 ,  H01L29/00 ,  H01L29/78 ,  H01L29/10 ,  H01L29/45 ,  H01L29/06 ,  H01L29/08

CPC classification number: H01L29/66681 ,  H01L29/00 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/456 ,  H01L29/66689 ,  H01L29/7816

Abstract: A semiconductor device comprising a substrate in which a first region and a second region are defined, a gate line which extends in a first direction and traverses the first region and the second region, a source region including a portion formed in the first region, a first part of a body region which is formed under the portion of the source region in the first region and has a first width, a first well which is formed under the first part of the body region in the first region and has a second width greater than the first width, a second part of the body region which is formed in the second region and has a third width, and a second well which is formed under the second part of the body region in the second region and has a fourth width smaller than the third width.

Abstract translation: 一种半导体器件，包括其中限定了第一区域和第二区域的衬底;沿第一方向延伸并穿过第一区域和第二区域的栅极线，包括形成在第一区域中的部分的源极区域， 形成在第一区域中的源极区域的下方并具有第一宽度的体区的第一部分，第一阱，其形成在第一区域中的主体区域的第一部分下方并且具有第二宽度 形成在第二区域中并且具有第三宽度的主体区域的第二部分和形成在第二区域中的身体区域的第二部分下方并且具有第四宽度的第二阱的第二部分 比第三宽。