公开(公告)号：US11532624B2

公开(公告)日：2022-12-20

申请号：US16217661

申请日：2018-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-Seok Jo ,  Jae-Hyun Lee ,  Jong-Han Lee ,  Hong-Bae Park ,  Dong-Soo Lee

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/66 ,  H01L29/51

Abstract: A semiconductor device may include a plurality of first active fins protruding from a substrate, each of the first active fins extending in a first direction; a second active fin protruding from the substrate; and a plurality of respective first fin-field effect transistors (finFETs) on the first active fins. Each of the first finFETs includes a first gate structure extending in a second direction perpendicular to the first direction, and the first gate structure includes a first gate insulation layer and a first gate electrode. The first finFETs are formed on a first region of the substrate and have a first metal oxide layer as the first gate insulation layer, and a second finFET is formed on the second active fin on a second region of the substrate, and the second finFET does not include a metal oxide layer, but includes a second gate insulation layer that has a bottom surface at the same plane as a bottom surface of the first metal oxide layer.