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    Semiconductor device
    3.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11532624B2

    公开(公告)日：2022-12-20

    申请号：US16217661

    申请日：2018-12-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Min-Seok Jo ,  Jae-Hyun Lee ,  Jong-Han Lee ,  Hong-Bae Park ,  Dong-Soo Lee

    IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/66 ,  H01L29/51

    Abstract: A semiconductor device may include a plurality of first active fins protruding from a substrate, each of the first active fins extending in a first direction; a second active fin protruding from the substrate; and a plurality of respective first fin-field effect transistors (finFETs) on the first active fins. Each of the first finFETs includes a first gate structure extending in a second direction perpendicular to the first direction, and the first gate structure includes a first gate insulation layer and a first gate electrode. The first finFETs are formed on a first region of the substrate and have a first metal oxide layer as the first gate insulation layer, and a second finFET is formed on the second active fin on a second region of the substrate, and the second finFET does not include a metal oxide layer, but includes a second gate insulation layer that has a bottom surface at the same plane as a bottom surface of the first metal oxide layer.

    Method of controlling uniformity of plasma and plasma processing system
    4.
    发明授权
    Method of controlling uniformity of plasma and plasma processing system 有权

    公开(公告)号：US11282678B2

    公开(公告)日：2022-03-22

    申请号：US16535801

    申请日：2019-08-08

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dong-Hyeon Na ,  Seung-Bo Shim ,  Ha-Dong Jin ,  Min-Young Hur ,  Kyo-Hyeok Kim ,  Jong-Woo Sun ,  Jae-Hyun Lee

    IPC: H01J37/32 ,  H03H7/38

    Abstract: According to a method of controlling uniformity of plasma, a first RF driving pulse signal including first RF pulses is generated by pulsing a first RF signal having a first frequency, and a second RF driving pulse signal including second RF pulses is generated by pulsing a second RF signal having a second, lower frequency. The first and second RF driving signals are applied to a top electrode and/or a bottom electrode of a plasma chamber. A harmonic control signal including harmonic control pulses is generated based on timing of the first and second RF pulses. A harmonic component of the first and second RF driving pulse signals is reduced via intermittent activation and deactivation of a harmonic control circuit as controlled by the harmonic control signal. The uniformity of plasma is improved through the control based on timings of the RF driving pulses.

    METHOD OF CONTROLLING UNIFORMITY OF PLASMA AND PLASMA PROCESSING SYSTEM
    5.
    发明申请
    METHOD OF CONTROLLING UNIFORMITY OF PLASMA AND PLASMA PROCESSING SYSTEM 审中-公开

    公开(公告)号：US20200227240A1

    公开(公告)日：2020-07-16

    申请号：US16535801

    申请日：2019-08-08

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： DONG-HYEON NA ,  Seung-Bo Shim ,  Ha-Dong Jin ,  Min-Young Hur ,  Kyo-Hyeok Kim ,  Jong-Woo Sun ,  Jae-Hyun Lee

    IPC: H01J37/32 ,  H03H7/38

    Abstract: According to a method of controlling uniformity of plasma, a first RF driving pulse signal including first RF pulses is generated by pulsing a first RF signal having a first frequency, and a second RF driving pulse signal including second RF pulses is generated by pulsing a second RF signal having a second, lower frequency. The first and second RF driving signals are applied to a top electrode and/or a bottom electrode of a plasma chamber. A harmonic control signal including harmonic control pulses is generated based on timing of the first and second RF pulses. A harmonic component of the first and second RF driving pulse signals is reduced via intermittent activation and deactivation of a harmonic control circuit as controlled by the harmonic control signal. The uniformity of plasma is improved through the control based on timings of the RF driving pulses.

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