公开(公告)号：US11532624B2

公开(公告)日：2022-12-20

申请号：US16217661

申请日：2018-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-Seok Jo ,  Jae-Hyun Lee ,  Jong-Han Lee ,  Hong-Bae Park ,  Dong-Soo Lee

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/66 ,  H01L29/51

Abstract: A semiconductor device may include a plurality of first active fins protruding from a substrate, each of the first active fins extending in a first direction; a second active fin protruding from the substrate; and a plurality of respective first fin-field effect transistors (finFETs) on the first active fins. Each of the first finFETs includes a first gate structure extending in a second direction perpendicular to the first direction, and the first gate structure includes a first gate insulation layer and a first gate electrode. The first finFETs are formed on a first region of the substrate and have a first metal oxide layer as the first gate insulation layer, and a second finFET is formed on the second active fin on a second region of the substrate, and the second finFET does not include a metal oxide layer, but includes a second gate insulation layer that has a bottom surface at the same plane as a bottom surface of the first metal oxide layer.

公开(公告)号：US10381490B2

公开(公告)日：2019-08-13

申请号：US16040807

申请日：2018-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Jung Kim ,  Dong-Soo Lee ,  Sang-Yong Kim ,  Jin-Kyu Jang ,  Won-Keun Chung ,  Sang-Jin Hyun

IPC: H01L21/8234 ,  H01L29/792 ,  H01L27/092 ,  H01L29/49 ,  H01L29/78 ,  H01L21/8238 ,  H01L21/28 ,  H01L29/66

Abstract: A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.

公开(公告)号：US11784260B2

公开(公告)日：2023-10-10

申请号：US17863127

申请日：2022-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Jung Kim ,  Dong-Soo Lee ,  Sang-Yong Kim ,  Jin-Kyu Jang ,  Won-Keun Chung ,  Sang-Jin Hyun

IPC: H01L29/792 ,  H01L27/092 ,  H01L29/49 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/28 ,  H01L29/66 ,  H01L29/423 ,  H01L29/06 ,  H01L29/775 ,  H01L29/10 ,  B82Y10/00 ,  H01L29/786 ,  H01L27/088

CPC classification number: H01L29/7926 ,  B82Y10/00 ,  H01L21/28088 ,  H01L21/82345 ,  H01L21/823842 ,  H01L27/088 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/0692 ,  H01L29/1079 ,  H01L29/42376 ,  H01L29/42392 ,  H01L29/4966 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/785 ,  H01L29/78696 ,  H01L21/823462 ,  H01L21/823857

Abstract: A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.

公开(公告)号：US11411124B2

公开(公告)日：2022-08-09

申请号：US17134611

申请日：2020-12-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Jung Kim ,  Dong-Soo Lee ,  Sang-Yong Kim ,  Jin-Kyu Jang ,  Won-Keun Chung ,  Sang-Jin Hyun

IPC: H01L21/28 ,  H01L29/792 ,  H01L27/092 ,  H01L29/49 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/423 ,  H01L29/06 ,  H01L29/775 ,  H01L29/10 ,  B82Y10/00 ,  H01L29/786 ,  H01L27/088

Abstract: A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.

公开(公告)号：US11101695B2

公开(公告)日：2021-08-24

申请号：US15965274

申请日：2018-04-27

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Sung-Ku Yeo ,  Sang-Yun Kim ,  Jae-Seok Park ,  Young-Ho Ryu ,  Kang-Yoon Lee ,  Hamed Abbasizadeh ,  Sang-Wook Kwon ,  Thi Kim Nga Truong ,  Dong-In Kim ,  Sung-Bum Park ,  Dong-Soo Lee ,  Seung Il Huh

IPC: H02J7/00 ,  H02J7/14 ,  H02J50/12 ,  H02J50/70 ,  H02J7/02 ,  H02M7/217 ,  H02J50/20

Abstract: An electronic device is provided. The electronic device includes a receiving circuit configured to wirelessly receive power and output AC power, a rectifying circuit configured to rectify the AC power from the receiving circuit, wherein the rectifying circuit may include a first P-MOSFET configured to transfer a positive amplitude of power to an output terminal of the rectifying circuit while the AC power has the positive amplitude and to prevent transferring a negative amplitude of power to the output terminal of the rectifying circuit while the AC power has the negative amplitude, and a forward loss compensating circuit connected with the first P-MOSFET configured to reduce a threshold voltage of the first P-MOSFET while the AC power has the positive amplitude.

公开(公告)号：US10923602B2

公开(公告)日：2021-02-16

申请号：US16532645

申请日：2019-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Jung Kim ,  Dong-Soo Lee ,  Sang-Yong Kim ,  Jin-Kyu Jang ,  Won-Keun Chung ,  Sang-Jin Hyun

IPC: H01L29/792 ,  H01L27/092 ,  H01L29/49 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/28 ,  H01L29/66 ,  H01L29/423 ,  H01L29/06 ,  H01L29/775 ,  H01L29/10 ,  B82Y10/00 ,  H01L29/786 ,  H01L27/088

Abstract: A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.