公开(公告)号：US20150195565A1

公开(公告)日：2015-07-09

申请号：US14591417

申请日：2015-01-07

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Industry-Academic Cooperation Foundation, Yonsei University

Inventor： Seung-soo JEONG ,  Won-woo RO ,  Ho-cheon WEY ,  Kyung-ah KIM ,  Deok-ho KIM ,  Min-woo KIM ,  Chan-yul KIM

IPC: H04N19/59 ,  H04N19/176 ,  H04N19/167 ,  H04N19/44 ,  H04N19/593

CPC classification number: H04N19/567 ,  H04N19/51 ,  H04N19/52 ,  H04N19/537

Abstract: A video encoding and decoding methods and apparatuses for performing the methods thereof are provided. The video encoding method includes: determining a region in a current image having a change in at least one of a scale and an angle with respect to a reference image; generating variation information representing a variation in at least one of the scale and the angle between the region in the current image and a reference region in the reference image corresponding to the region in the current image; and encoding residual information representing a difference between a predicted sample value from the reference image and a sample value of the current image based on the generated variation information.

Abstract translation: 提供了用于执行其方法的视频编码和解码方法和装置。 视频编码方法包括：确定当前图像中相对于参考图像具有比例尺和角度中的至少一个的变化的区域; 生成表示当前图像中的区域与对应于当前图像中的区域的参考图像中的参考区域之间的刻度和角度中的至少一个的变化的变化信息; 以及基于所生成的变化信息来编码表示来自参考图像的预测样本值与当前图像的样本值之间的差的残差信息。

公开(公告)号：US20150131371A1

公开(公告)日：2015-05-14

申请号：US14282470

申请日：2014-05-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwansoo SUH ,  Insu JEON ,  Min-woo KIM ,  Young-jae SONG ,  Min WANG ,  Qinke WU ,  Sung-joo LEE ,  Sung-kyu JANG ,  Seong-jun JUNG

IPC: G11C11/16 ,  G11B5/33 ,  G11B5/39

CPC classification number: G11C11/161 ,  G11C2213/35 ,  H01L27/22 ,  H01L27/222 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/30

Abstract: Provided are a magnetic resistance structure, a method of manufacturing the magnetic resistance structure, and an electronic device including the magnetic resistance structure. The method of manufacturing the magnetic resistance structure includes forming a hexagonal boron nitride layer, forming a graphene layer on the boron nitride layer, forming a first magnetic material layer between the boron nitride layer and the graphene layer according to an intercalation process; and forming a second magnetic material layer on the graphene layer.

Abstract translation: 提供磁阻结构，制造磁阻结构的方法以及包括磁阻结构的电子器件。 制造磁阻结构的方法包括：形成六方氮化硼层，在氮化硼层上形成石墨烯层，根据嵌入工艺在氮化硼层和石墨烯层之间形成第一磁性材料层; 以及在所述石墨烯层上形成第二磁性材料层。