公开(公告)号：US20230170375A1

公开(公告)日：2023-06-01

申请号：US18155419

申请日：2023-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younggu JIN ,  Youngchan KIM ,  Taesub JUNG ,  Yonghun KWON ,  Moosup LIM

IPC: H01L27/146 ,  G01S7/4865 ,  G01B11/22 ,  G01S17/894

CPC classification number: H01L27/14641 ,  G01S7/4865 ,  H01L27/14612 ,  G01B11/22 ,  G01S17/894 ,  H01L27/1463

Abstract: A depth sensor includes a first pixel including a plurality of first photo transistors each receiving a first photo gate signal, a second pixel including a plurality of second photo transistors each receiving a second photo gate signal, a third pixel including a plurality of third photo transistors each receiving a third photo gate signal, a fourth pixel including a plurality of fourth photo transistors each receiving a fourth photo gate signal, and a photoelectric conversion element shared by first to fourth photo transistors of the plurality of first to fourth photo transistors.

公开(公告)号：US20220272289A1

公开(公告)日：2022-08-25

申请号：US17674045

申请日：2022-02-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngsun OH ,  Hyungjin BAE ,  Moosup LIM

IPC: H04N5/355 ,  H04N5/378 ,  H04N5/3745

Abstract: An image sensor including a pixel that includes: a first photodiode; a second photodiode having a larger light-receiving area than the first photodiode; a first floating diffusion node accumulating charges of the first photodiode; a second floating diffusion node accumulating charges of the second photodiode; a capacitor accumulating charges overflowing from the first photodiode; a first switch transistor having a first end connected to the first floating diffusion node and a second end connected to the capacitor; and a driving transistor configured to convert the accumulated charges into a pixel signal, the first switch transistor is turned on in a low conversion gain (LCG) mode of a readout section of the first photodiode, and is turned off in a high conversion gain (HCG) mode of the readout section of the first photodiode, and the readout circuit generates image data based on pixel signals from the first and second sections.

公开(公告)号：US20210144325A1

公开(公告)日：2021-05-13

申请号：US16876567

申请日：2020-05-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younggu JIN ,  Youngchan KIM ,  Moosup LIM

IPC: H04N5/378 ,  H04N5/3745 ,  H01L27/146 ,  H04N5/372

Abstract: According to at least some example embodiments of the inventive concepts, a sensor includes a pixel array including a pixel configured to generate a first pixel signal and a second pixel signal, based on a light sensed during a window time of a sensing time; processing circuitry configured to select a measuring range from among a plurality of measuring ranges and set a width of the window time based on the selected measuring range; a converting circuit configured to convert the first and second pixel signals into digital signals; and a driving circuit configured to generate an overflow control signal, a first photo gate signal, and a second photo gate signal so as to sense the light during the window time, wherein the pixel includes, a photoelectric conversion element, first and second readout circuits configured to receive charges, and an overflow transistor configured to remove charges.

公开(公告)号：US20180190709A1

公开(公告)日：2018-07-05

申请号：US15800376

申请日：2017-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haewon LEE ,  Sangjoo LEE ,  Moosup LIM ,  Younghwan PARK ,  Dongjoo YANG ,  Kang-Sun LEE ,  Jiwon LEE

IPC: H01L27/146 ,  H01L31/02 ,  H04N5/374 ,  H04N5/378

CPC classification number: H01L27/14654 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/1463 ,  H01L31/02019 ,  H04N5/3591 ,  H04N5/374 ,  H04N5/37457 ,  H04N5/378

Abstract: An image sensor includes a separation impurity layer in a semiconductor layer and defining a photoelectric conversion region and a readout circuit region, a photoelectric conversion layer in the semiconductor layer of the photoelectric conversion region and surrounded by the separation impurity layer, a floating diffusion region spaced apart from the photoelectric conversion layer and in the semiconductor layer of the photoelectric conversion region, a transfer gate electrode between the photoelectric conversion layer and the floating diffusion region, and impurity regions in the semiconductor layer of the readout circuit region. When the photoelectric conversion layer is integrated with photo-charges, the separation impurity layer has a first potential level around the photoelectric conversion layer and a second potential level on a portion between the photoelectric conversion layer and the impurity regions of the readout circuit region. The second potential level is greater than the first potential level.