公开(公告)号：US09627056B2

公开(公告)日：2017-04-18

申请号：US15009814

申请日：2016-01-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mu-hui Park ,  Yeong-taek Lee ,  Dae-seok Byeon

IPC: G11C13/00

CPC classification number: G11C13/004 ,  G11C7/062 ,  G11C11/5642 ,  G11C13/0061 ,  G11C2013/0054 ,  G11C2211/5645

Abstract: A resistive memory device comprising: a memory cell having a programmable resistance representing stored data; and a read circuit configured to be connected to the memory cell via a first signal line and read the stored data, wherein the read circuit includes: a voltage controller configured to control a first voltage of the first signal line to be a constant voltage and output a signal to a sensing node; and a sense amplifier connected to the voltage controller via the sensing node, and configured to compare a sensing voltage of the sensing node with a reference voltage.