公开(公告)号：US10062691B2

公开(公告)日：2018-08-28

申请号：US15460897

申请日：2017-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyerim Moon ,  Myounghun Choi

IPC: H01L29/40 ,  H01L21/44 ,  H01L27/088 ,  H01L27/092 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/06 ,  H01L23/528

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823475 ,  H01L23/5283 ,  H01L27/0207 ,  H01L27/0629 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/41791 ,  H01L29/861

Abstract: A semiconductor device includes merged contact plugs. A multi-fin active having N sub-fins is formed in a substrate. A contact plug is formed on the impurity areas. N is an integer between about eight (8) and about one thousand (1000). The N sub-fins include a first sub-fin formed in the outermost portion of the multi-fin active and a second sub-fin formed near the first sub-fin. A straight line perpendicular to a surface of the substrate and passes through a virtual bottom edge of the contact plug is disposed between the first sub-fin and the second sub-fin, or through the second sub-fin. The virtual bottom edge of the contact plug is defined at a cross point of a correlation line extending on a side surface of the contact plug and a horizontal line in contact with a lowermost end of the contact plug and parallel to the surface of the substrate.

公开(公告)号：US20180350804A1

公开(公告)日：2018-12-06

申请号：US16046394

申请日：2018-07-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyerim Moon ,  Myounghun Choi

IPC: H01L27/088 ,  H01L21/8234 ,  H01L27/092 ,  H01L27/02 ,  H01L27/06 ,  H01L23/528

Abstract: A semiconductor device includes merged contact plugs. A multi-fin active having N sub-fins is formed in a substrate. A contact plug is formed on the impurity areas. N is an integer between about eight (8) and about one thousand (1000). The N sub-fins include a first sub-fin formed in the outermost portion of the multi-fin active and a second sub-fin formed near the first sub-fin. A straight line perpendicular to a surface of the substrate and passes through a virtual bottom edge of the contact plug is disposed between the first sub-fin and the second sub-fin, or through the second sub-fin. The virtual bottom edge of the contact plug is defined at a cross point of a correlation line extending on a side surface of the contact plug and a horizontal line in contact with a lowermost end of the contact plug and parallel to the surface of the substrate.

公开(公告)号：US10529714B2

公开(公告)日：2020-01-07

申请号：US16046394

申请日：2018-07-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyerim Moon ,  Myounghun Choi

IPC: H01L29/40 ,  H01L21/44 ,  H01L27/088 ,  H01L27/092 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/06 ,  H01L23/528 ,  H01L29/861 ,  H01L29/06

Abstract: A semiconductor device includes merged contact plugs. A multi-fin active having N sub-fins is formed in a substrate. A contact plug is formed on the impurity areas. N is an integer between about eight (8) and about one thousand (1000). The N sub-fins include a first sub-fin formed in the outermost portion of the multi-fin active and a second sub-fin formed near the first sub-fin. A straight line perpendicular to a surface of the substrate and passes through a virtual bottom edge of the contact plug is disposed between the first sub-fin and the second sub-fin, or through the second sub-fin. The virtual bottom edge of the contact plug is defined at a cross point of a correlation line extending on a side surface of the contact plug and a horizontal line in contact with a lowermost end of the contact plug and parallel to the surface of the substrate.