公开(公告)号：US20170256645A1

公开(公告)日：2017-09-07

申请号：US15446322

申请日：2017-03-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-yup CHUNG ,  Myung-yoon UM ,  Dong-ho CHA ,  Jung-gun YOU ,  Gi-gwan PARK

IPC: H01L29/78 ,  H01L29/06 ,  H01L21/8238 ,  H01L29/16 ,  H01L29/161 ,  H01L27/092 ,  H01L29/08

CPC classification number: H01L29/7854 ,  H01L21/823431 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/66818 ,  H01L29/7843 ,  H01L29/7846

Abstract: An integrated circuit (IC) device includes a pair of fin-shaped active areas that are adjacent to each other with a fin separation area therebetween, the pair of fin-shaped active areas extend in a line, and a fin separation insulating structure in the fin separation area, wherein the pair of fin-shaped active areas includes a first fin-shaped active area having a first corner defining part of the fin separation area, and wherein the fin separation insulating structure includes a lower insulating pattern that covers sidewalls of the pair of fin-shaped active areas, and an upper insulating pattern on the lower insulating pattern to cover at least part of the first corner, the upper insulating pattern having a top surface at a level higher than a top surface of each of the pair of fin-shaped active areas.

公开(公告)号：US20190035934A1

公开(公告)日：2019-01-31

申请号：US16150795

申请日：2018-10-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-yup CHUNG ,  Myung-yoon UM ,  Dong-ho CHA ,  Jung-gun YOU ,  Gi-gwan PARK

IPC: H01L29/78 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/161 ,  H01L29/16 ,  H01L29/08 ,  H01L29/06 ,  H01L27/12 ,  H01L27/092 ,  H01L27/088 ,  H01L21/84 ,  H01L21/8238

CPC classification number: H01L29/7854 ,  H01L21/823431 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/66818 ,  H01L29/7843 ,  H01L29/7846

Abstract: An integrated circuit (IC) device includes a pair of fin-shaped active areas that are adjacent to each other with a fin separation area therebetween, the pair of fin-shaped active areas extend in a line, and a fin separation insulating structure in the fin separation area, wherein the pair of fin-shaped active areas includes a first fin-shaped active area having a first corner defining part of the fin separation area, and wherein the fin separation insulating structure includes a lower insulating pattern that covers sidewalls of the pair of fin-shaped active areas, and an upper insulating pattern on the lower insulating pattern to cover at least part of the first corner, the upper insulating pattern having a top surface at a level higher than a top surface of each of the pair of fin-shaped active areas.