公开(公告)号：US10707254B2

公开(公告)日：2020-07-07

申请号：US16152625

申请日：2018-10-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taeyon Lee ,  Gwideokryan Lee ,  Myungwon Lee

IPC: H01L27/146

Abstract: Semiconductor devices are provided. The semiconductor devices may include a substrate, a device isolation pattern in the substrate to electrically isolate a first pixel and a second pixel from each other, a conductive pattern in the device isolation pattern, and a doping layer on a side surface of the device isolation pattern. The doping layer may have a conductivity type different from a conductivity type of the substrate.

公开(公告)号：US09679929B2

公开(公告)日：2017-06-13

申请号：US14052168

申请日：2013-10-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： GwideokRyan Lee ,  SangChul Sul ,  Myungwon Lee ,  Min-ho Kim ,  Taechan Kim ,  Taeseok Oh ,  KwangHyun Lee ,  Taeyon Lee ,  Younggu Jin

IPC: H01L27/146 ,  B82Y20/00

CPC classification number: H01L27/14609 ,  B82Y20/00 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14679

Abstract: A binary image sensor includes a plurality of unit pixels on a substrate having a surface on which light is incident. At least one quantum dot is disposed on the surface of a substrate. A column sense amplifier circuit is configured to detect binary information of a selected unit pixel among the plurality of unit pixels from a voltage or a current detected from the selected unit pixel, and a processing unit is configured to process binary information of the respective unit pixels to generate pixel image information. Related devices and methods of operation are also discussed.

公开(公告)号：US10134792B2

公开(公告)日：2018-11-20

申请号：US15499333

申请日：2017-04-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taeyon Lee ,  Gwideokryan Lee ,  Myungwon Lee

IPC: H01L27/146

Abstract: Semiconductor devices are provided. The semiconductor devices may include a substrate, a device isolation pattern in the substrate to electrically isolate a first pixel and a second pixel from each other, a conductive pattern in the device isolation pattern, and a doping layer on a side surface of the device isolation pattern. The doping layer may have a conductivity type different from a conductivity type of the substrate.

公开(公告)号：US20180061873A1

公开(公告)日：2018-03-01

申请号：US15499333

申请日：2017-04-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： TAEYON LEE ,  Gwideokryan Lee ,  Myungwon Lee

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14643

Abstract: Semiconductor devices are provided. The semiconductor devices may include a substrate, a device isolation pattern in the substrate to electrically isolate a first pixel and a second pixel from each other, a conductive pattern in the device isolation pattern, and a doping layer on a side surface of the device isolation pattern. The doping layer may have a conductivity type different from a conductivity type of the substrate.

公开(公告)号：US20140103193A1

公开(公告)日：2014-04-17

申请号：US14052168

申请日：2013-10-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： GwideokRyan Lee ,  SangChul Sul ,  Myungwon Lee ,  Min-ho Kim ,  Taechan Kim ,  Taeseok Oh ,  KwangHyun Lee ,  Taeyon Lee ,  Younggu Jin

IPC: H01L27/146

CPC classification number: H01L27/14609 ,  B82Y20/00 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14679

Abstract: A binary image sensor includes a plurality of unit pixels on a substrate having a surface on which light is incident. At least one quantum dot is disposed on the surface of a substrate. A column sense amplifier circuit is configured to detect binary information of a selected unit pixel among the plurality of unit pixels from a voltage or a current detected from the selected unit pixel, and a processing unit is configured to process binary information of the respective unit pixels to generate pixel image information. Related devices and methods of operation are also discussed.

Abstract translation: 二值图像传感器包括在具有光入射的表面的基板上的多个单位像素。 至少一个量子点设置在基板的表面上。 列读出放大器电路被配置为从从所选择的单位像素检测的电压或电流中检测多个单位像素中的所选单位像素的二进制信息，并且处理单元被配置为处理各单位像素的二进制信息 以生成像素图像信息。 还讨论了相关设备和操作方法。

公开(公告)号：US20190043902A1

公开(公告)日：2019-02-07

申请号：US16152625

申请日：2018-10-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： TAEYON LEE ,  Gwideokryan Lee ,  Myungwon Lee

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14665 ,  H01L27/14689

Abstract: Semiconductor devices are provided. The semiconductor devices may include a substrate, a device isolation pattern in the substrate to electrically isolate a first pixel and a second pixel from each other, a conductive pattern in the device isolation pattern, and a doping layer on a side surface of the device isolation pattern. The doping layer may have a conductivity type different from a conductivity type of the substrate.

公开(公告)号：US09293489B2

公开(公告)日：2016-03-22

申请号：US14315730

申请日：2014-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myungwon Lee ,  Sangchul Sul ,  Hirosige Goto ,  Sae-Young Kim ,  Kang-Su Lee ,  Gwideokryan Lee ,  Masaru Ishii

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464

Abstract: An image sensor includes a semiconductor substrate, a storage node region in the semiconductor substrate, an insulating portion on the semiconductor substrate, a via contact extending through the insulating portion, a photo-electric converter in the semiconductor substrate and spaced apart from the storage node region, an organic photo-electric layer on the insulating portion, and a buffer interposed between and electrically connecting the via contact and the storage node region.

Abstract translation: 图像传感器包括半导体衬底，半导体衬底中的存储节点区域，半导体衬底上的绝缘部分，延伸穿过绝缘部分的通孔接触，半导体衬底中的光电转换器，并与存储节点间隔开 区域，绝缘部分上的有机光电层，以及插入在电触点和存储节点区域之间并将其电连接的缓冲器。