公开(公告)号：US20180204874A1

公开(公告)日：2018-07-19

申请号：US15696132

申请日：2017-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang-Min LEE ,  GwideokRyan LEE ,  SEOKJIN KWON ,  BEOMSUK LEE ,  TAEYON LEE ,  DONGMO IM

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14605 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14636 ,  H04N9/045 ,  H04N9/07 ,  H04N2209/042

Abstract: An image sensor having active, peripheral and dummy regions is provided as follows. A dummy through electrode is disposed in the substrate. An active through electrode is disposed in the substrate. An insulation structure in which a color filter is embedded is disposed on the substrate. A dummy bottom electrode is disposed on the insulation structure and connected electrically to the dummy through electrode. An active bottom electrode is disposed on the insulation structure and connected electrically to the active through electrode. A photoelectric conversion layer is disposed on the insulation structure. A top electrode is disposed on the photoelectric conversion layer and the dummy bottom electrode. The top electrode is connected electrically to the dummy bottom electrode. The photoelectric conversion layer is interposed between the top electrode and the active bottom electrode which are separated from each other.

公开(公告)号：US20230017757A1

公开(公告)日：2023-01-19

申请号：US17947702

申请日：2022-09-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANGSU PARK ,  KWANSIK KIM ,  SANGCHUN PARK ,  BEOMSUK LEE ,  TAEYON LEE

IPC: H01L27/146 ,  H04N9/04 ,  H04N5/357 ,  H01L51/42

Abstract: An image sensor includes pixel regions separated by an isolation region and receiving incident light, color filters respectively disposed on a surface of the semiconductor substrate corresponding to the pixel regions, a cover insulating layer disposed on the surface of the semiconductor substrate and covering the color filters, first transparent electrodes disposed on the cover insulating layer and spaced apart to respectively overlap the color filters, an isolation pattern disposed on the cover insulating layer between the first transparent electrodes and having a trench spaced apart from the first transparent electrodes, a drain electrode disposed in the trench of the isolation pattern, and an organic photoelectric layer and a second transparent electrode sequentially disposed on the first transparent electrodes and the isolation pattern.

公开(公告)号：US20210136330A1

公开(公告)日：2021-05-06

申请号：US16878303

申请日：2020-05-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANGSU PARK ,  KWANSIK KIM ,  SANGCHUN PARK ,  BEOMSUK LEE ,  TAEYON LEE

IPC: H04N9/04 ,  H04N5/357

Abstract: An image sensor includes pixel regions separated by an isolation region and receiving incident light, color filters respectively disposed on a surface of the semiconductor substrate corresponding to the pixel regions, a cover insulating layer disposed on the surface of the semiconductor substrate and covering the color filters, first transparent electrodes disposed on the cover insulating layer and spaced apart to respectively overlap the color filters, an isolation pattern disposed on the cover insulating layer between the first transparent electrodes and having a trench spaced apart from the first transparent electrodes, a drain electrode disposed in the trench of the isolation pattern, and an organic photoelectric layer and a second transparent electrode sequentially disposed on the first transparent electrodes and the isolation pattern.

公开(公告)号：US20200219914A1

公开(公告)日：2020-07-09

申请号：US16589488

申请日：2019-10-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHANGHWA KIM ,  KWANSIK KIM ,  YOONKYOUNG KIM ,  SANG-SU PARK ,  BEOMSUK LEE ,  TAEYON LEE ,  MIN-JUN CHOI

IPC: H01L27/146 ,  H01L27/148

Abstract: An image sensor and a method of fabricating the same, the image sensor including a semiconductor substrate having a first surface and a second surface facing each other; a first photoelectric conversion part disposed on the second surface of the semiconductor substrate; a first floating diffusion region provided in the semiconductor substrate adjacent to the first surface; a first interlayered insulating layer covering the first surface; a first channel pattern on the first interlayered insulating layer; and a first transfer gate electrode disposed adjacent to the first channel pattern and that controls transfer of charge generated in the first photoelectric conversion part to the first floating diffusion region through the first channel pattern.

公开(公告)号：US20240274633A1

公开(公告)日：2024-08-15

申请号：US18460753

申请日：2023-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： JIHYUN KWAK ,  HONGKI KIM ,  HYO EUN KIM ,  SANG-HOON SONG ,  SEUNGJAE OH ,  SURIM LEE ,  TAEYON LEE

IPC: H01L27/146

CPC classification number: H01L27/14627 ,  H01L27/14685 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/14636

Abstract: Disclosed is an image sensor which includes a substrate including an active region that includes a plurality of photoelectric conversion pixels and a peripheral region that extends around the active region, a transparent window on the substrate, a wall structure that is on the peripheral region along a periphery of the substrate and seals a space between the substrate and the transparent window, a planarization insulting layer on the active region and a portion of the peripheral region of the substrate, and a plurality of lens patterns on the planarization insulating layer. The planarization insulting layer includes first to third lens regions, and the lens patterns have different shapes and/or are arranged at different intervals on the first to third lens regions.

公开(公告)号：US20200381473A1

公开(公告)日：2020-12-03

申请号：US16711301

申请日：2019-12-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHANGHWA KIM ,  KWANSIK KIM ,  DONGCHAN KIM ,  SANG-SU PARK ,  BEOMSUK LEE ,  TAEYON LEE ,  HAJIN LIM

IPC: H01L27/146 ,  H01L51/44

Abstract: An image sensor and a method of fabricating the image sensor, the image sensor including a semiconductor substrate having a first floating diffusion region, a molding pattern over the first floating diffusion region and including an opening, a first photoelectric conversion part at a surface of the semiconductor substrate, and a first transfer transistor connecting the first photoelectric conversion part to the first floating diffusion region. The first transfer transistor includes a channel pattern in the opening and a first transfer gate electrode. The channel pattern includes an oxide semiconductor. The channel pattern also includes a sidewall portion that covers a side surface of the opening, and a center portion that extends from the sidewall portion to a region over the first transfer gate electrode.

公开(公告)号：US20190043902A1

公开(公告)日：2019-02-07

申请号：US16152625

申请日：2018-10-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： TAEYON LEE ,  Gwideokryan Lee ,  Myungwon Lee

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14665 ,  H01L27/14689

Abstract: Semiconductor devices are provided. The semiconductor devices may include a substrate, a device isolation pattern in the substrate to electrically isolate a first pixel and a second pixel from each other, a conductive pattern in the device isolation pattern, and a doping layer on a side surface of the device isolation pattern. The doping layer may have a conductivity type different from a conductivity type of the substrate.

公开(公告)号：US20140103190A1

公开(公告)日：2014-04-17

申请号：US14026388

申请日：2013-09-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KWANGHYUN LEE ,  TAECHAN KIM ,  TAEYON LEE ,  YOUNGGU JIN

IPC: H01L27/146

CPC classification number: H01L27/14612 ,  H01L27/1464 ,  H04N5/3355

Abstract: A binary image sensor includes; binary pixels, each having a transistor structure, being coupled between a drain line and a column line and generating a number of photons in response to incident light, sense amplifiers connected to a respective column line and outputting a binary value in response to detecting a voltage corresponding to current flowing to the column line when a gate voltage is applied to a gate line connected to a gate of a binary pixel, and an accumulator configured to accumulate binary values output by the sense amplifiers.

Abstract translation: 二进制图像传感器包括： 每个具有晶体管结构的二进制像素耦合在漏极线和列线之间并且响应于入射光产生多个光子，连接到相应列线的读出放大器和响应于检测到电压而输出二进制值 对应于当栅极电压施加到连接到二进制像素的栅极的栅极线时流到列线的电流，以及累加器，被配置为累积由读出放大器输出的二进制值。

公开(公告)号：US20240290812A1

公开(公告)日：2024-08-29

申请号：US18504674

申请日：2023-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： SEUNGKUK KANG ,  TAEYON LEE ,  HYO EUN KIM ,  Gyuseok LEE

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14634 ,  H01L27/1469

Abstract: An image sensor comprising a circuit chip and an image sensor chip on the circuit chip. The image sensor chip includes a first substrate extending in a first direction and a second direction, a first interlayer dielectric layer between the first substrate and the circuit chip, and a first bonding pad in the first interlayer dielectric layer and having a first width in a first direction. The circuit chip includes a second substrate, a second interlayer dielectric layer and a third interlayer dielectric layer that are sequentially stacked on the second substrate, and a second bonding pad in the second and third interlayer dielectric layers and having a second width in the first direction. The first and second bonding pads are in contact with each other. A change in the second width along a third direction is greater than a change in the first width along the third direction, the third direction intersects the first and second directions.

公开(公告)号：US20210066362A1

公开(公告)日：2021-03-04

申请号：US17035908

申请日：2020-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： GWI-DEOK RYAN LEE ,  TAEYON LEE

IPC: H01L27/146 ,  H01L27/148 ,  H01L31/062

Abstract: An image sensor may include a substrate including a plurality of unit pixel regions and having first and second surfaces facing each other. Each of the unit pixel regions may include a plurality of floating diffusion parts spaced apart from each other in the substrate, storage nodes provided in the substrate to be spaced apart from and facing the floating diffusion parts, a transfer gate adjacent to a region between the floating diffusion parts and the storage nodes, and photoelectric conversion parts sequentially stacked on one of the first and second surfaces. Each of the photoelectric conversion parts may include common and pixel electrodes respectively provided on top and bottom surfaces thereof and each pixel electrode may be electrically connected to a corresponding one of the storage nodes.