-
公开(公告)号:US11082652B2
公开(公告)日:2021-08-03
申请号:US16225642
申请日:2018-12-19
发明人: Younggu Jin , Youngchan Kim , Min-Sun Keel
IPC分类号: H04N5/3745 , H04N5/369 , H04N5/374 , H04N5/378 , H04N5/359 , G01S7/4863
摘要: Image sensors and methods of operating the image sensors are provided. The image sensors may include a pixel configured to generate an image signal in response to light incident on the pixel. The pixel may include a charge collection circuit configured to collect charges, which are produced by the light incident on the pixel, during a sensing period and a floating diffusion region. The image sensor may further include a storage unit configured to store the charges and, during a transfer period after the sensing period, configured to transfer at least a portion of the charges to the floating diffusion region. An amount of charges that is transferred from the storage unit to the floating diffusion region may be controlled by a voltage level of a storage control signal that is applied to a storage control terminal of the storage unit.
-
公开(公告)号:US20140103193A1
公开(公告)日:2014-04-17
申请号:US14052168
申请日:2013-10-11
发明人: GwideokRyan Lee , SangChul Sul , Myungwon Lee , Min-ho Kim , Taechan Kim , Taeseok Oh , KwangHyun Lee , Taeyon Lee , Younggu Jin
IPC分类号: H01L27/146
CPC分类号: H01L27/14609 , B82Y20/00 , H01L27/1461 , H01L27/14612 , H01L27/14679
摘要: A binary image sensor includes a plurality of unit pixels on a substrate having a surface on which light is incident. At least one quantum dot is disposed on the surface of a substrate. A column sense amplifier circuit is configured to detect binary information of a selected unit pixel among the plurality of unit pixels from a voltage or a current detected from the selected unit pixel, and a processing unit is configured to process binary information of the respective unit pixels to generate pixel image information. Related devices and methods of operation are also discussed.
摘要翻译: 二值图像传感器包括在具有光入射的表面的基板上的多个单位像素。 至少一个量子点设置在基板的表面上。 列读出放大器电路被配置为从从所选择的单位像素检测的电压或电流中检测多个单位像素中的所选单位像素的二进制信息,并且处理单元被配置为处理各单位像素的二进制信息 以生成像素图像信息。 还讨论了相关设备和操作方法。
-
公开(公告)号:US20220021831A1
公开(公告)日:2022-01-20
申请号:US17173290
申请日:2021-02-11
发明人: Younggu Jin , Youngchan Kim , Youngsun Oh
IPC分类号: H04N5/369 , H04N5/341 , G01S17/894 , G01S7/4863 , G01S7/4865
摘要: A depth pixel of a time-of-flight (ToF) sensor includes a common photogate disposed in a center region of the depth pixel, a plurality of floating diffusion regions disposed in a peripheral region surrounding the center region, a plurality of demodulation transfer gates disposed in the peripheral region, and a plurality of overflow gates disposed in the peripheral region. The demodulation transfer gates transfer a photo charge collected by the common photogate to the plurality of floating diffusion regions. The demodulation transfer gates are symmetric with respect to each of a horizontal line and a vertical line that pass through a center of the depth pixel and are substantially perpendicular to each other. The overflow gates drain the photo charge collected by the common photogate, and are symmetric with respect to each of the horizontal line and the vertical line.
-
公开(公告)号:US11088185B2
公开(公告)日:2021-08-10
申请号:US16592840
申请日:2019-10-04
发明人: Younggu Jin , Youngchan Kim , Yonghun Kwon , Moosup Lim , Taesub Jung
IPC分类号: H04N5/374 , H01L27/146 , H04N5/378 , H04N5/3745 , H04N5/225 , G06T7/50
摘要: An image sensor includes a polarizer array and a depth pixel array. The polarizer array may include first to fourth unit pixels, which are arranged in a first direction and a second direction crossing each other, and may include polarization gratings respectively provided in the first to fourth unit pixels. The polarization gratings of the first to fourth unit pixels may have polarization directions different from each other. The depth pixel array may include depth pixels corresponding to the first to fourth unit pixels, respectively. Each of the depth pixels may include a photoelectric conversion device and first and second readout circuits, which are connected in common to the photoelectric conversion device.
-
公开(公告)号:US11644552B2
公开(公告)日:2023-05-09
申请号:US16921060
申请日:2020-07-06
发明人: Younggu Jin , Min-Sun Keel , Daeyun Kim , Youngchan Kim
IPC分类号: G01S7/48 , G01S7/486 , G01S17/894 , G01S7/481 , G01S7/4863 , G01S17/18
CPC分类号: G01S7/4868 , G01S7/4815 , G01S7/4863 , G01S17/18 , G01S17/894
摘要: An electronic device includes a time of flight (ToF) sensor including a pixel array, a light source that emits light signals, and an optical device that projects the light signals to areas of an object which respectively correspond to a plurality of pixel blocks including pixels of the pixel array. Each of the pixels includes a plurality of taps each including a photo transistor, a first transfer transistor connected with the photo transistor, a storage element connected with the first transfer transistor, a second transfer transistor connected with the storage element, a floating diffusion area connected with the second transfer transistor, and a readout circuit connected with the floating diffusion area. An overflow transistor is disposed adjacent to the photo transistor and connected with a power supply voltage.
-
公开(公告)号:US11627266B2
公开(公告)日:2023-04-11
申请号:US17173290
申请日:2021-02-11
发明人: Younggu Jin , Youngchan Kim , Youngsun Oh
IPC分类号: H04N5/369 , H04N5/341 , G01S7/4865 , G01S7/4863 , G01S17/894
摘要: A depth pixel of a time-of-flight (ToF) sensor includes a common photogate disposed in a center region of the depth pixel, a plurality of floating diffusion regions disposed in a peripheral region surrounding the center region, a plurality of demodulation transfer gates disposed in the peripheral region, and a plurality of overflow gates disposed in the peripheral region. The demodulation transfer gates transfer a photo charge collected by the common photogate to the plurality of floating diffusion regions. The demodulation transfer gates are symmetric with respect to each of a horizontal line and a vertical line that pass through a center of the depth pixel and are substantially perpendicular to each other. The overflow gates drain the photo charge collected by the common photogate, and are symmetric with respect to each of the horizontal line and the vertical line.
-
公开(公告)号:US09831279B2
公开(公告)日:2017-11-28
申请号:US15258812
申请日:2016-09-07
发明人: Younggu Jin , Jungchak Ahn
IPC分类号: H01L27/146
CPC分类号: H01L27/14614 , H01L27/14643
摘要: An image sensor includes a photoelectric conversion portion providing a recessed region, a transfer gate provided in the recessed region, and a floating diffusion region adjacent the transfer gate. The transfer gate includes a first pattern and a second pattern, which are sequentially stacked in the recessed region and have different conductivity types from each other.
-
公开(公告)号:US11798973B2
公开(公告)日:2023-10-24
申请号:US18155419
申请日:2023-01-17
发明人: Younggu Jin , Youngchan Kim , Taesub Jung , Yonghun Kwon , Moosup Lim
IPC分类号: H01L27/146 , G01S7/4865 , G01B11/22 , G01S17/894
CPC分类号: H01L27/14641 , G01B11/22 , G01S7/4865 , G01S17/894 , H01L27/1463 , H01L27/14612
摘要: A depth sensor includes a first pixel including a plurality of first photo transistors each receiving a first photo gate signal, a second pixel including a plurality of second photo transistors each receiving a second photo gate signal, a third pixel including a plurality of third photo transistors each receiving a third photo gate signal, a fourth pixel including a plurality of fourth photo transistors each receiving a fourth photo gate signal, and a photoelectric conversion element shared by first to fourth photo transistors of the plurality of first to fourth photo transistors.
-
公开(公告)号:US11711625B2
公开(公告)日:2023-07-25
申请号:US17540491
申请日:2021-12-02
发明人: Younggu Jin
IPC分类号: H04N5/3745 , H04N25/53 , H04N25/74 , H04N25/75 , H04N25/771
CPC分类号: H04N25/53 , H04N25/74 , H04N25/75 , H04N25/771
摘要: Provided are a pixel array and an image sensor including the same. The pixel array includes a plurality of sub-pixels adjacent to each other and a readout circuit connected to the plurality of sub-pixels through a floating diffusion node. Each of the sub-pixels includes a photoelectric conversion element, an overflow transistor connected to the photoelectric conversion element, a phototransistor connected to the photoelectric conversion element and the overflow transistor, and a storage element connected to the phototransistor.
-
10.
公开(公告)号:US11290673B2
公开(公告)日:2022-03-29
申请号:US16876567
申请日:2020-05-18
发明人: Younggu Jin , Youngchan Kim , Moosup Lim
IPC分类号: H04N5/378 , H01L27/146 , H04N5/372 , H04N5/3745 , H04N5/369
摘要: According to at least some example embodiments of the inventive concepts, a sensor includes a pixel array including a pixel configured to generate a first pixel signal and a second pixel signal, based on a light sensed during a window time of a sensing time; processing circuitry configured to select a measuring range from among a plurality of measuring ranges and set a width of the window time based on the selected measuring range; a converting circuit configured to convert the first and second pixel signals into digital signals; and a driving circuit configured to generate an overflow control signal, a first photo gate signal, and a second photo gate signal so as to sense the light during the window time, wherein the pixel includes, a photoelectric conversion element, first and second readout circuits configured to receive charges, and an overflow transistor configured to remove charges.
-
-
-
-
-
-
-
-
-